10KMB Search Results

TP 152N

Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
Contextual Info: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)

12L10

Abstract: 16L6 20L10 20L8 PLD20G10C 12DC
Contextual Info: 4bE SEMICONDUCTOR SSÔTbtS D OGGbTMM PRELIMINARY CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — fM A X = 1 0 5 M tte • Reduced ground bounce and under­

Contextual Info: PAL22V10C _ PAL22VP10C Universal PAL Device SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors 10 user>programmable output macrocells — Output polarity control — Registered or combinatorial

Contextual Info: CY101E484 CY10E484 CY100E484 .1 ^ CYPRESS SEMICONDUCTOR Features • 4096 x 4-bit organization • Ultra high speed/standard power — tAA = 4 ,5 ns — I e e ~ 320 mA • Low-power version — tAA = 7,10 ns — Iee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions

Contextual Info: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine

Contextual Info: CY10E494 CY100E494 CY101E494 CYPRESS SEMICONDUCTOR 16,384x4 ECL Static RAM Features • Capable o f w ithstanding >2001V E SD • 16,384 x 4 bits organization • Open emitter output for ease of memory expansion • Ultra high speed/standard power • Industry-standard pinout

Contextual Info: PLD20G10C ¡5 r CYPRESS SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control U sing B iC M O S process and Ti-W fuses,

12L10

Abstract: 16L6 18L4 20L10 20L8
Contextual Info: PLD20G10C i f CYPR ESS Features • 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — Pin or product term output enable control • Ultra high speed supports today’s and tomorrow’s fastest microprocessors

L22V10C-10PC

Contextual Info: PAL22V10C PAL22VP10C y CYPRESS Universal PAL Device B iC M O S process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the fam iliarsum -of-products A N D -O R logic structure and a new concept, the program ­ m able m acrocell. • 10 user-programmable output

Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR Features • Open emitter output for ease of memory expansion • 4096 x 4-bit organization • 4K x 4 ECL Static RAM • Industry-standard pinout Ultra high speed/standard power — t AA = 4, 5 ns Functional Description

28D03

Abstract: CY10E484 HT12 WA 934 CY10E484L CY10E484L7JC decoder HT12
Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR 4K x 4 ECL Static RAM • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 4096 x 4-bit organization • Ultra high speed/standard power Functional Description — U a = 4, 5 n s

Contextual Info: CY101E484 CY10E484 CY100E484 r CYPRESS SEMICONDUCTOR Features 4K x 4 ECL Static RAM • Open emitter output for ease o f memory expansion 4096 x 4-bit organization • Industry-standard pinout Ultra high speed/standard power — tAA = 4, 5 ns — Ie e = 320 III A

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsi = 3 ns — fMAX = 105MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­ tional V cc and Vss pins for lowest

236s2

Contextual Info: PALCE22V10 F CYPRESS Features 3 ns t$ 5 ns tpD 181-MHz state machine • Low power — 90 mA max. commercial 10 11s Functional Description — 10 ns m ilitai? and industrial ver­ sions 7 n stc o 6 n s ts 10 n s tpD 110-MHz state m achine — 130 mA max. commercial (5 ns)

10DC IR 3 PINS

Contextual Info: PAL22V10C PAL22VP10C CYPRESS SEMICONDUCTOR • Ultra high speed supports today's and tomorrow's fastest microprocessors — tp j * user-programmable output macrocells — Output polarity control BiCMOS process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the

Contextual Info: _ PALC22V10D SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for

Contextual Info: PLD20G10C CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD —7.5 ns — tsu = 3 ns — f\lAX = 105 MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­

22V10C

Abstract: PAL22V10C-7DC
Contextual Info: — . _ PAL22V10C _ PAL22VP10C SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 6 ns — tsu = 3 ns — fMAX = 117 MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­

22V10D-10

Abstract: CERAMIC LEADLESS CHIP CARRIER 22V10D 238Q PALC22V10D PALCE22V10
Contextual Info: For new designs, please refer to the PALCE22V10. m w CYPRESS PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features DIP, L C C , an d PLC C available • A dvanced secon d -gen eration PAL ar­ chitectu re — 7.5 n s com m ercial v ersion 5 n s tCo

Contextual Info: V CYPRESS Features PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device — Proven Flash EPROM technology • DIP, LCC, and PLCC available — 7 J ns commercial version • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns

Contextual Info: CY7C123 CYPRESS SEMICONDUCTOR Features Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)

PAL22

Contextual Info: PAL22V10C PAL22VP10C CYPRESS SEMICONDUCTOR Universal PAL Device BiCMOS process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the familiar sum-of-products AND-OR log­ ic structure and a new concept, the pro­ grammable macrocell. • 10 user-programmable output

AH 101K

Abstract: sd 484 ip
Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR W Features • 40% x 4-blt organization • U ltra high speed/standard power — tAA = 4 , 5 ns — I ee s 320 mA • Low-power version — ‘ a a = 7, 10 ns — I ee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions