10E2 DIODE Search Results

10E2 diode

Abstract: 10E2
Contextual Info: ｓ DIODE 10E2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

10E2 diode

Abstract: 10E2
Contextual Info: ｓ DIODE 10E2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

10E2 diode

Abstract: 10E8 10e1
Contextual Info: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /100 ~ 8 00 v FEATURES o o o ° o M iniature Size Low Forward Voltage Drop Low Reverse Leakage Current High Surge Capability 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS ' " \ > Type 10E1 10E4 10E2

10E2 diode

Abstract: 10E2
Contextual Info: Type：10E2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

10E2 diode

Abstract: 10E2
Contextual Info: Type：10E2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

10E2

Abstract: 10E1 10E4 10E6 10E8 10E2 diode
Contextual Info: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /10 0 ~ 8 0 0 v « FEATURES ° Miniature Size o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability ° 52mm Inside Tape Spacing Package Available 2.7 .106 DIA 2.3{.091) 0.9(.035) DIA 0.7(.027)

10E2

Abstract: 10e1 diode 10E1 LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 10E4 10E6 10E8 10E4-10E8 10E2 diode
Contextual Info: SILICON RECTIFIER DIODE ia/100~800 v ioei ~ ioe8 FEATURES o Miniature Size 2 7 U 0 6 D IA 2.3 .091) o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability 0.9(.035) DIA 0.7(.027) ° 52mm Inside Tape Spacing Package Available 27( 1.06)

C5257

Contextual Info: IKW30N100T TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCE sat - very tight parameter distribution

Contextual Info: SILICON RECTIFIER DIODE 10E1~10E8 i a /100~800 v FEATURES O M iniature Size 27U06 Dia 2.3 .091) o Low Forw ard Voltage D rop o Low Reverse Leakage C urrent o H igh Surge Capability 0.9(.035) DIA 0.7(.027) 27(1.06) ° 52mm Inside Tape Spacing Package Available

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

10E-2

Abstract: BU2507DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

10E-2

Abstract: BU1507DX
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

Contextual Info: TO SHIBA A D V A N CE INFORM ATION TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf74UfY1KS77FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

BU1507AX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.

BU2507AX

Abstract: 10E-2
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.

Contextual Info: 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS, 5 VOLTTOLERANT I/O IDT74LVC16540A ADVANCE INFORMATION DESCRIPTION: FEATURES: - Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)

Contextual Info: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

10E1

Abstract: 10E2 20E1 20E2 TC74VCX162827FT 10e2 equivalent
Contextual Info: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

log and antilog amplifier

Abstract: national linear brief 4 Vishay Ultronix Grand Junction CO Q81 sensistor Widlar anti-log 10E2 570X AN-30 C1995
Contextual Info: National Semiconductor Application Note 30 November 1969 One of the most predictable non-linear elements commonly available is the bipolar transistor The relationship between collector current and emitter base voltage is precisely logarithmic from currents below one picoamp to currents above

10 35L DIODE

Abstract: 10e1 diode 10E1 10E2 20E1 20E2 TC74VCX162827FT diode 10 35L
Contextual Info: TO SH IBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 7 4 V C X 1 6 2 8 2 7 FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: High Speed CMOS 3.3V Q uality S em iconductor , I n c . 20-Bit Buffer FEATURES/BENEFITS • • • • • • • • • • • • • QS74LCX16827 DESCRIPTION 5V tolerant inputs and outputs 10|aA Iccq quiescent power supply current Hot insertable 2.0V-3.6V Vcc supply operation