10N50 Search Results

10n50

Abstract: TO-220F1 DIODE 531 mosfet 10a 500v 10N50G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

10n50

Abstract: 10n5
Contextual Info: Model 10N50TV Flanged Termination 10 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting Flange Lead s : Features: Thick film Aluminum nitride ceramic Alumina Ceramic Copper, Nickel plated per QQ-N-290 99.9% pure silver (.006 thick)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N50K-MT Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum

RTO 618 entire

Abstract: 10N50F1 GE 639 40F1 10n50 10N40F1 DG10N
Contextual Info: l A HARFRIS HGTD10N40F1, HGTD10N40F1S, , R 10N50F1, 10N50F1S l s E M c o N D u c T o 10A, 400V and 500V N-Channel IGBTs Aprii 1995 Features Packages • 10A, 400V and 500V • v CE O N H G TD 10N 40F1, HG TD 10N50F1 J E D E C T O -251A A 2.5V Max.

10n50

Abstract: FET 10n50 KF10N50 10n5 KF10N50F TO220IS TO-220IS
Contextual Info: SEMICONDUCTOR 10N50F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 10N50 1 F 2 No. Item 801 3 Marking Description KF KEC Fresh FET 10N50 10N50 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 10. 13 Revision No : 0

Contextual Info: RFP-10N50T Aluminum Nitride Termination VER3/19/01 Description: RFP-10N50T Features: o 1kHz – 10.0 GHz o 10 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-10N50T is a general purpose 10 Watt termination

10n50

Abstract: 10n5
Contextual Info: Model 10N50TVR Flanged Termination 10 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting Flange Lead s : Features: • DC – 6.0 GHz • 10 Watts • Aluminum Nitride (AlN) Ceramic • Non-Nichrome Resistive Element Thick film

Contextual Info: RFP-10N50TVR Aluminum Nitride Termination VER3/19/01 Description: RFP-10N50TVR Features: o 1kHz – 4.0 GHz o 10 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-10N50TVR is a general purpose 10 Watt termination

10N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

IGT4E10

Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
Contextual Info: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s

12N50E

Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

C277C

Abstract: webcam circuit .s79 antenna switch ENE3925-LFQP176 MS-6837 an12948 tps51120 SLG85P512 sst25vf016b intel g41 msi
Contextual Info: A B C D E D-Sub RGB - D-Sub 2 3 Page 35 Page 25 +1_8VSUS +1_5VRUN SMDDR_VTERM MXM RGB RGB - Dock Port Replicator 965GM - RGB PCI-E x16 Type II Dual Channel DDRII 533/667 MHZ DDR-SODIMM0 Low Speed I/O Audio INTEL Crestline TV Out LVDS Page 15 Page 18 965GM - LVDS

diode 10a 400v

Abstract: HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50
Contextual Info: HGTP10N40F1D, 10N50F1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR

10n50c1d

Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
Contextual Info: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, HGTP10N40E1D, 10N50C1D, 10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.

Contextual Info: ULTRA PRECISION RESISTORS 1/8 WATT TO 2 WATT WORLD’S BEST TCR - AVAILABLE TO 0.25ppm/°C RCSBTORS'CAPStCOLS'O ElAirUNES HP SERIES - Hermetic Sealed VS SERIES - Epoxy Molded Case FEATURES □ □ □ □ □ Nichrosil Metal Foil - Unsurpassed Performance

10n50c1d

Abstract: 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D 10N50C1 10n50c 50C1D
Contextual Info: HGTP10N40C1D, HGTP10N40E1D, 10N50C1D, 10N50E1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR

10N40F1D

Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
Contextual Info: HGTP10N40F1D, 10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS

10N50A

Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
Contextual Info: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, 10N50D, 10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

10N500

Contextual Info: Page 21 Ultra Precision Metal Film Resistors SEI Type UP Highest Stability Metal Film Available TCRs as Low as 5 PPM Tolerances as Low as .0 1 % Available Matched Sets Available Low N oise Higher Power Options Available -B - ••- A -•

diode 10a 400v

Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
Contextual Info: HGTP10N40F1D, 10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance

C277C

Abstract: 10P25 ISL6262 intel g41 msi 965PM circuit mini amplifier with usb sd an12948 EC103 SCR RSMRST 10n16
Contextual Info: A B C D E DC JACK & Selector Page 3,4 DC-Adapter IN D-Sub RGB - D-Sub 2 3 Page 35 Page 25 +1_8VSUS +1_5VRUN SMDDR_VTERM MXM RGB RGB - Dock Port Replicator 965GM - RGB NORTH BRIDGE PCI-E x16 Type II DDR-SODIMM0 Low Speed I/O Audio INTEL Crestline TV Out LVDS

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90