10N50F1 Search Results

10N50F1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
10N50F1		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
10N50F1D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
10N50F1S		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1

10N50F1 Price and Stock

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Harris Semiconductor


Harris Semiconductor 10N50F1D N-Channel IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	10N50F1D		169		1	1 - 10 - 100 $1.12 1000 $0.93 10000 $0.83	Buy Now
Harris Semiconductor HGTD10N50F1 Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTD10N50F1		2,649		1	1 - 10 - 100 $1.57 1000 $1.40 10000 $1.32	Buy Now
Harris Semiconductor HGTD10N50F1S Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTD10N50F1S		495		1	1 - 10 - 100 $1.07 1000 $0.89 10000 $0.79	Buy Now

10N50F1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RTO 618 entire Abstract: 10N50F1 GE 639 40F1 10n50 10N40F1 DG10N Contextual Info: l A HARFRIS HGTD10N40F1, HGTD10N40F1S, , R 10N50F1, 10N50F1S l s E M c o N D u c T o 10A, 400V and 500V N-Channel IGBTs Aprii 1995 Features Packages • 10A, 400V and 500V • v CE O N H G TD 10N 40F1, HG TD 10N50F1 J E D E C T O -251A A 2.5V Max.	OCR Scan	HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10N50F1 -251A 40F1S -252A RTO 618 entire GE 639 40F1 10n50 10N40F1 DG10N	PDF
diode 10a 400v Abstract: HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50 Contextual Info: HGTP10N40F1D, 10N50F1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR	Original	HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. 150oC 100oC -50oC diode 10a 400v HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50	PDF
10N40F1D Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512 Contextual Info: HGTP10N40F1D, 10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4\|iS	OCR Scan	HGTP10N40F1D, HGTP10N50F1D O-220AB HGTP10N50F1D 00A/U9 10N40F1D 10N50F1D GE 639 transistor 10n50 10N50F1 GEP diode RN2512	PDF
diode 10a 400v Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1 Contextual Info: HGTP10N40F1D, 10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance	Original	HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. diode 10a 400v 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1	PDF