1067 TRANSISTOR Search Results

2N2222A bjt

Abstract: 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION
Contextual Info: Application Note AN-1067 Design Considerations When Using RadiationHardened Small Signal Logic Level MOSFETs Table of Contents Page Introduction . 1 Acronyms. 1

Contextual Info: ^£.m.L-donaactoi Lproducti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX25 NPN SILICON POWER TRANSISTOR 25.15(0.99] 26.67(1,05) 1067 (0.42) 11.18(0.44} 1,52(006) 343(0135) FEATURES

smd transistor marking j6

Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
Contextual Info: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation

Contextual Info: Application Note 1067 Application Notes for AP3770 System Solution Prepared by Su Qing Hua System Engineering Dept. Regulation PSR . AP3770 has the special technique to suppress the audio noise, internal line compensation to reduce the number of system components, fixed cable

Contextual Info: MwT-H16 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE

SOLAR TRANSISTOR

Abstract: High Power Microwave Device
Contextual Info: MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE

smd transistor M28 sot23

Abstract: ISL6225A CAP ELL 10UF SMD panasonic MSL level smd diode 5d isl6227caz smd diode 1d SMD Transistor 5f 4d SMD Transistor panasonic Radial lead MSL level
Contextual Info: ISL6227EVAL1 DDR Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board DDR implementation. For information about the dual switcher application, please refer to the ISL6227EVAL2 Evaluation Board Setup Procedure.

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors PMSTA05; PMSTA06 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Primarily intended for telephony and professional

Contextual Info: SIEMENS BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ lk f l, R2=1kfl Ordering Code Pin Configuration XXs UPON INQUIRY 1= B Package II CO O Marking BCR 571 LU II

Contextual Info: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • 7-circuit buffer • • • • Low output breakdown voltage : V ce sus = 3 5 V (min)

2n5830

Contextual Info: 2N5830 NPN small signal high voltage general purpose amplifier. 0.15 T. 1 of 2 Home Part Number: 2N5830 Online Store 2N5830 Diodes NPN s m all s ignal high v o lt age general purpo s e am plifier. Transistors

TRANSISTOR zt751

Abstract: zt751 SOT-223 zt751 PZT751T1-D
Contextual Info: ON Semiconductort PZT751T1 PNP Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface

Contextual Info: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz

DN8650

Abstract: darlington buffer array Seven Transistor Array PNP DN-86
Contextual Info: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • • • • • 7-circuit buffer Low output breakdown voltage : V ce sus = 35V (min)

pcf79735S

Abstract: PCF79735 PCF7930XP philips PCF7931XP PCF7931 pcf7973 PCF7930 TRANSISTOR 612 Voltage Regulator Diodes Temperature Sensors
Contextual Info: Philips Semiconductors Selection guide Alphanumerical index PAGE AU2901 Quad voltage comparator AU2902 Low power quad voltage comparator 1421 AU2903 Low power dual voltage comparator 1426 AU2904 Low power dual operational amplifier 1431 1416 BUK100-50DL PowerMOS transistor logic level TOPFET

TYP 513 309

Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
Contextual Info: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250

D86DQ2

Abstract: IRF330
Contextual Info: M Û IRF330.331 D86DQ2.Q1 T 5.5 AMPERES 400, 350 VOLTS RDS(ON = 1.0 fi RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

y-parameter

Abstract: MPS-H81 MPSH81
Contextual Info: MPS-H81 SILICON PNP SILICON E P IT A X IA L TRANSISTO R . designed fo r use in U H F /V H F oscillator applications. PNP SILICON TRANSISTOR C omplete y-Parameter Curves Low Collector-Em iitter Capacitance — Cce = 0.65 pF (Max) @ V CB = 10 Vdc High C urrent Gain — Bandwidth Product - @ I q = 6.0 mAdc

Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Contextual Info: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81

Contextual Info: Philips Semiconductors Objective specification PowerMOS transìstor GENERAL DESCRIPTION PHP4N50E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP4N50E QUICK REFERENCE DATA itiW N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

1B47

Abstract: SD1463
Contextual Info: T SGS-THOMSON *7#. mW IUiOT@«i SD1463 TCC0204-125 rz RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ ■ ■ ■ 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION ■ P o u t = 125 W MIN. WITH 7.0 dB GAIN PIN CONNECTION 2 1 1 2 DESCRIPTION

50 watts 10mhz 4a

Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073
Contextual Info: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR