PG1074 Search Results

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TK 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

marking 6-PIN PLASTIC TSON

Abstract: HS350 G5W marking
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PG1083

Abstract: PG1070 PG1067 PG1068 PG1069 PG1071 PG1072 PG1073 PG1074 PG1075
Contextual Info: 0043 59 2 A P I ELECTRONICS INC . — - Ampower Semiconductor Corp. 375 Kings Highway 11787 : Hauppauge, N. Y. 20 A ‘-e 14 A- loo^s^s oooomt t I-' INTERIM BULLETIN s 3 de Su b je ct to Revision Without Notice -APRIL 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TK 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

Contextual Info: DATA SHEET GaAs HJ-FET INTEGRATED CIRCUIT PG2255T6N 1.9 GHz POWER AMPLIFIER FOR DECT DESCRIPTION The μPG2255T6N is a GaAs MMIC for power amplifier for 1.9 GHz DECT use. This device originates from the μPG2250T5N for BluetoothTM Class 1, and is guaranteed for the performance at 1.9

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TB 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

HS350

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PG2406TB

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TB 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

Contextual Info: GaAs INTEGRATED CIRCUIT PG2406TK 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The PG2406TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2193T6E GaAs MMIC SP8T SWITCH FOR MOBILE COMMUNICATIONS DESCRIPTION The μPG2193T6E is a GaAs MMIC SP8T switch with SPI control function, which is developed for GSM triple band and W-CDMA triple band applications. The μPG2193T6E can operate with voltage from 2.5 to 3.0 V, with low insertion loss, high isolation, and high

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid