PG1071 Search Results

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

PG2159T6R

Abstract: package T6R
Contextual Info: GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The PG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency

PG1083

Abstract: PG1070 PG1067 PG1068 PG1069 PG1071 PG1072 PG1073 PG1074 PG1075
Contextual Info: 0043 59 2 A P I ELECTRONICS INC . — - Ampower Semiconductor Corp. 375 Kings Highway 11787 : Hauppauge, N. Y. 20 A ‘-e 14 A- loo^s^s oooomt t I-' INTERIM BULLETIN s 3 de Su b je ct to Revision Without Notice -APRIL 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN

HS350

Abstract: PG2185T6R
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2.5 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2.5 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.5 GHz band and 6 GHz band, having the

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

PG2185T6R

Abstract: HS350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Abstract: PG2159T6R
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2 GHz TO 6 GHz <R> DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2 GHz to 6 GHz applications, including dual-band wireless LAN. This device can operate frequency from 2 GHz to 6 GHz, having

PG2159T6R

Abstract: HS350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2 GHz TO 6 GHz <R> DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2 GHz to 6 GHz applications, including dual-band wireless LAN. This device can operate frequency from 2 GHz to 6 GHz, having

50 watts 10mhz 4a

Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073
Contextual Info: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Abstract: PG2185T6R
Contextual Info: GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2 GHz TO 6 GHz <R> DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2 GHz to 6 GHz applications, including dual-band wireless LAN. This device can operate from frequency 2 GHz to 6 GHz, with the

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from