PG1010 Search Results

PG1010R

Contextual Info: DATA SHEET PG100R~PG1010R GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes DO-41 Unit: inch mm FEATURES • High current capability. • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing

AL1510

Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
Contextual Info: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

Contextual Info: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN

marking g2p

Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.

GRM39CH

Abstract: marking g2p TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PG1010R

Abstract: PG154R PG102R
Contextual Info: 9. GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER PIV Peak Inverse Voltage MAX AVG Rectified C urrent @ Hall W ave Res. Load 60Hz MAX FWD Surge Peak Current M O Hz Superimposed MAX Reverse Current @PIV Voltage @25°C T A MAX Forward Voltage MAX Reverse

2N4862

Abstract: PG1010 API Electronics transistor 1012 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006
Contextual Info: :a "p I ELEC T R O N IC S IN C : 13 . / ,-Í3A00 75t DE~J QD43Scì2 0G0D07S 1 ^ - fa - INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN * 3 n “O n m o v P I R G O E L E C T R o n ic s iñc. ; Z ^ rJ