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Contextual Info: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN
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0007spg1017pg1001pg1002+6pg10032n4862pg1004pg1005pg1006pg1007
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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marking g2j
Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HS350
Abstract: VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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hs350vp215 |
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HS350
Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2006TB L, S-BAND 1.8 V CONTROL VOLTAGE SPDT SWITCH DESCRIPTION The µPG2006TB is an L, S-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low
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pg2006tbhs350vp215 |
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pg2004
Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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2n4862pg1001pg1002pg1003+10pg1004pg1005pg1006pg1007pg1008pg1009pg2004pg2011pg2001pg2006
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HS350
Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG187GR GaAs MMIC DBS TWIN-SPDT FOR 2 x 2 SWITCH MATRIX DESCRIPTION The µPG187GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least multi LNB are required.
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2N4862
Abstract: PG1010 API Electronics transistor 1012 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006
Contextual Info: :a "p I ELEC T R O N IC S IN C : 13 . / ,-Í3A00 75t DE~J QD43Scì2 0G0D07S 1 ^ - fa - INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN * 3 n “O n m o v P I R G O E L E C T R o n ic s iñc. ; Z ^ rJ
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