GRM39CH Search Results

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

DFT301-801

Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 

DFT301

Abstract: DFT301-801 grm40ch102j50pt PC8179TK-E2 7R102S50 GRM39CH100D50PT marking code 18 6pin GRM39CH080D50PT PC8178
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 

GRM39B

Abstract: 10-PIN GRM39CH TFL0816-2N7 TFL0816-3N3 NEC K 2124
Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2124TH L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2124TH is GaAs MMIC for PA driver amplifier with variable gain function which were developed for WCDMA and another L-band application. The device can operate with 2.85 V, having the high gain and low distortion.

TFL0816-15N

Abstract: UPG2301TQ 10-PIN PG2301TQ GRM39CH grm39 GRM39CH102J50
Contextual Info: DATA SHEET NEC's POWER AMPLIFIER FOR BLUETOOTH CLASS 1 UPG2301TQ FEATURES DESCRIPTION • OPERATION FREQUENCY fopt = 2,400 to 2,500 MHz 2 450 MHz TYP. NEC's µPG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1. • SUPPLY VOLTAGE VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

GRM42-6CH

Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Contextual Info: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

GRM39CH220J50

Abstract: UB1112C-D1 MNR14-E0AB-J000 GRM39CH221J50 MCR10EZHJ1001 QFP256PIN HD74HC164FP 269M1602-226M NT10-8SAG-10L9 UB1112C
Contextual Info: ADJ-702-299 日立マイクロコンピュータ開発環境システム SH7751 CPUボード ユーザーズマニュアル HS7751STC01HJ SH7751 CPUボード ユーザーズマニュアル 発行年月日 発行 編集 株式会社 日立製作所 平成 12 年 9 月 第 1 版

c3228 transistor

Abstract: c3228 x6889m EPCOS company x6889m epcos x6889m GRM39B X6889 GRM36B GRM39CH c3228 transistor power
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

GRM39CK

Abstract: DFT301 7R102S50 GRM39CH100D50PT
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

GRM39B

Abstract: P1501 GRM36CH GRM39CH TFL0510 VP15-00-3 PR 8501
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

GRM39CK

Abstract: GRM39B 10-PIN GRM39CH TFL0816-2N7 TFL0816-3N3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DFT301

Abstract: 7R102S50 uPC8179tk
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

marking g2p

Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.

grm39ck1r5c50

Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

GRM39CH

Abstract: marking g2p TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

C3228

Abstract: x6889m epcos x6889m PU10623EJ01V0DS X6889 GRM36B GRM39B c3228 transistor GRM39CH IC MARKING amp 1005
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3228T5S LOW DISTORTION DOWN-CONVERTER + AGC AMPLIFIER + VIDEO AMPLIFIER DESCRIPTION The μPC3228T5S is a silicon bipolar monolithic IC designed for use as IF down-converter for digital TV, digital CATV. This IC consists of AGC amplifier, mixer and video amplifier.

GRM39CH101J50PT

Abstract: GRM39B102K50PT DFT301 GRM39CH680J50PT GRM39CH300J50PT GRM39F105Z10PT
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TFL0816-10N

Abstract: VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

VP215

Abstract: 10-PIN TFL0816-15N
Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301TQ POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301TQ is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed

GRM39CH

Abstract: Susumu Marking TFL0816-3N9 diode gp 429 TFL0816-12N TFL0816-22N TFL0816-27N TFL0816-33N TFL0816-5N6 TFL0816-6N8
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2132TQ L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2132TQ is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.