B170B Search Results

B1100 DIODES INC

Abstract: B180 63 marking, sma package diode B1100 B170/B B170B B1100B B170 B180B B190
Contextual Info: SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · Schottky Barrier Chip · · High Temperature Soldering: 260°C/10 Second at Terminal Guard Ring Die Construction for Transient Protection

B180

Contextual Info: B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly

marking code 63, sma package

Abstract: marking b1100 sma b1100 marking Sma marking CODE 63 B180
Contextual Info: SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · Schottky Barrier Chip · · High Temperature Soldering: 260°C/10 Second at Terminal Guard Ring Die Construction for Transient Protection

B1100

Abstract: B180 sma marking 63 B1100B B170 B170B B180B B190 B190B
Contextual Info: SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · Guard Ring Die Construction for Transient Protection · · High Temperature Soldering: 260°C/10 Second at Terminal

B1100

Abstract: B180 sma marking CODE 63 SMB MARKING EX B170/B B170B B1100B B170 B180B B190
Contextual Info: B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SMBJ11CA

Abstract: SMBJ22A-13-F sk341 SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA B2100A
Contextual Info: DCS/PCN-1112 PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: March 9. 2009 June 7, 2009 Discrete Semiconductor Encapsulate PCN #: PCN-1112 TITLE Conversion of SMA, SMB and SMC packages to Green Encapsulate molding compound

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

SMBJ11CA

Abstract: SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA
Contextual Info: DATE: 11th March, 2011 PCN #: 2034 REV 01 on 4th August, 2011 PCN Title: Qualification of Additional Assembly and Test Site for Select SMA, SMB, SMC, and TO220AB Packaged Devices

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

B170B

Abstract: B1100B B120B B130B B140B B150B B160B B180B
Contextual Info: B120B thru B1100B Surface Mount Schottky Barrier Rectifiers Feature: *For Surface Mount Application *Metal-Semiconductor Junction With Guardring *Epitaxial Construction *Very Low Forward Voltage Drop *High Current Capability *Plastic Meterial Has UL Flammability Classification 94V-0

B260D

Abstract: b330adic B160DICT-ND SR506D B130LDI B140DICT b340d 1N5817MDICT-ND B180DICT-ND SR105D
Contextual Info: Schottky Barrier Rectifiers Max. Avg. Max. Peak Max. Surge Max. Rev. Max. For. Rect. Reverse Current Current @ Voltage Fig. Current A Voltage (V) 8.3ms(A) 25°C(mA) Peak (V) 1 1 100 20 30 20 30 40 25 25 40 40 40 1.0 1.0 1.0 1.0 1.0 0.45 0.55 0.55 0.55 0.55

MB1100

Abstract: B170B 190B B1100 B1100B SB1100 S5827
Contextual Info: MB1100 SCHOTTKY DIE SPECIFICATION Revision 3 5/25/2000 General Description Low Ir 100V 1A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.1 mA Maximum Instantaneous Forward Voltage @ 1 Amperes, 25 0 SYM

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

SOT523

Abstract: 1N4148W SOD123 2N7002 SOT23 BC856B-7-F RS3G-13-F B140 SMA bas16 sod123 DLP05LC MMSZ5226B-7-F B530C-13-F
Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: December 1, 2005 December 1, 2005 Alert Category: PCN-1044 Alert Type: Discrete Semiconductor Product Update PCN #: PCN #: 1044 TITLE Introduction of Product in certain D2PAK, GBJ, MELF, PM3, SMA, SMB,SMC,SOD/SOT Packages that are RoHS compliant.

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

Contextual Info: DATE: 17th October, 2013 PCN #: 2123 PCN Title: Qualification of Additional Assembly and Test Site for Select SMA, SMB and SMC Packaged Products. Dear Customer: This is an announcement of change s to products that are currently being