1000V P-CHANNEL MOSFET Search Results

Contextual Info: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.

443h

Contextual Info: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT901R3BN

Abstract: APT1001R3BN
Contextual Info: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

APT1002RBNR

Contextual Info: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.

1004R2BN

Abstract: APT904RBN Apt904r2bn 1004rbn
Contextual Info: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN APT1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.

210 RBN

Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
Contextual Info: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg

APT1001RBNR

Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

APT1001R1AN

Abstract: APT1001R3AN
Contextual Info: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001R1BNR

Abstract: 1001R1
Contextual Info: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.

APT*1002R4BN

Abstract: 2T640
Contextual Info: A dvanced P ow er Te c h n o lo g y 8 O D O APT1002RBNR APT1002R4BNR s 1000V 7.0A 2.00Q 1000V 6.5A 2.400 3* WER MOS IV'81 UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol VDSS All Ratings: T c = 2 5 °C unless otherwise specified.

APT1001R1HN

Abstract: APT1001R3HN APT901R1HN APT901R3HN
Contextual Info: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APL1001P

Contextual Info: D P-Pack G APL1001P S POWER MOS IV 1000V 18.0A 0.60W HERMETIC PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APL1001P UNIT 1000 Volts Drain-Source Voltage

Contextual Info: Prelim inary Data Sheet OM6056SB OM6058SB OM6O6OSB OM6Q57SB OM6Q59SB OM6O6IS B POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE High Current, High Voltage 100V Thru 1000V. Up To 190 Am p N-Channel. Size 7 MOSFETs FEATURES • • • • Size 7 Die, High Energy

Contextual Info: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN

5809

Contextual Info: APT10025PVR 33A 0.250Ω 1000V POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

1001RBN

Contextual Info: ADVANCED P ow er Te c h n o l o g y APT1001RBN 1000V 11.0A 1.00Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001RBN

1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET

Contextual Info: OM6025SC OM6027SC OM6031SC OM6026SC OM6Û28SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V. Up To 26 A m p N-Channel. Size 6 MOSFETs. High En erg y Ca pa bility FEATURES • • • • • • Isolated Hermetic Metal Package

OM6034NM

Abstract: OM6035NM OM6036NM OM6106
Contextual Info: OM6034NM OM6036NM OM6Q35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Am p, N-Channel MOSFET In A S urface M ount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current

Contextual Info: O A dvanced P o w er Te c h n o lo g y * D O S APT1001R6BN APT901R6BN 1000V 900V 8.0A 1.60Í2 8.0A 1.60Q POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter

APT901RBN

Abstract: ha9002
Contextual Info: • T ADVANCED I r J P ow er M Te c h n o lo g y APT1001RBN APT901RBN Hi'vvtK mos 1000V 11.0A 1.00Q 900V 11.0A 1.000 n® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter