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    Microchip Technology Inc

    Microchip Technology Inc APT1001RBNPB

    MOSFET MOS 4 1000 V 1 Ohm TO-247
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    Master Electronics APT1001RBNPB
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    Avnet Americas APT1001RBNPB Bulk 30
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    • 1000 $39.94
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    Microchip Technology Inc APT1001RBNPB Tube 28 Weeks
    • 1 $49.20
    • 10 $49.20
    • 100 $42.49
    • 1000 $38.98
    • 10000 $37.70
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    Microchip Technology Inc APT1001RBNG

    MOSFET MOS 4 1000 V 1 Ohm TO-247, Projected EOL: 2046-04-30 - Contact for Pricing
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    Microchip Technology Inc APT1001RBNG 28 Weeks
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    Richardson RFPD APT1001RBNG 30
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    Microchip Technology Inc APT1001RBNRG

    MOSFET MOS 4 Rugged 1000 V 1 Ohm TO-247, Projected EOL: 2051-07-03 - Contact for Pricing
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    Microchip Technology Inc APT1001RBNRG 28 Weeks
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    1001RBN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1001RBN

    Contextual Info: ADVANCED P ow er Te c h n o l o g y 1001RBN 1000V 11.0A 1.00Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001RBN


    OCR Scan     		apt1001rbn1001rbno-247ad PDF

    Contextual Info: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		apt1001r1bnapt1001r3bn1001rbn1001r3bn+3150voltageapt1001r1/1001r3bno-247ad PDF

    APT901RBN

    Abstract: APT1001RBN 1001RBN APT5030BN
    Contextual Info: D TO-247 G 1001RBN 1000V 11.0A 1.00Ω S POWER MOS IV 21.0A 0.30Ω APT5030BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		o-247apt1001rbnapt5030bn1001rbn+2o-247adapt901rbn PDF

    1001RBN

    Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN
    Contextual Info: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		o-247apt1001r1bnapt1001r3bn1001rbn+31001r3bno-247ad1001rb PDF