APT901R1 Search Results

APT1001R1HN

Abstract: APT1001R3HN APT901R1HN APT901R3HN
Contextual Info: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

443h

Contextual Info: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001R1AN

Abstract: APT1001R3AN
Contextual Info: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

1001r1bn

Abstract: 130Q APT1001R3BN diode 1000V
Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.

Contextual Info: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT901R3BN

Abstract: APT1001R3BN
Contextual Info: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

APT1001R1BN

Abstract: APT901R1BN 1001R3BN 1001r1bn
Contextual Info: A d v a n ced ROW ER Te c h n o l o g y o D O S POWER MOS IV< APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5 A 10.5 A 10.0A 10.0 A 1.10Q 1.10Q 1.3012 1.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

SML1001R1BN

Abstract: APT901R1BN 1001R1BN SML1001R3BN SML901R1BN SML901R3BN APT901R
Contextual Info: SEMELAB t>OE PLC - 01 3 3 1 0 7 O O O O b ü O 73S « S m B D MOS POWER 4 SML1001R1BN 1000V 10.5A 1.1 OQ SML901R1BN 900V 10.5A 1.1 OQ SML1001R3BN 1000V 10.0A 1.3012 SML901R3BN 900V 10.0A 1.3012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS