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APT1001RBNR Datasheets (1)

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Advanced Power Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT1001RBNR		Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF	189.39KB	4

APT1001RBNR Price and Stock

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Microchip Technology Inc


Microchip Technology Inc APT1001RBNRG MOSFET MOS 4 Rugged 1000 V 1 Ohm TO-247, Projected EOL: 2051-07-03 - Contact for Pricing
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	APT1001RBNRG			12 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	APT1001RBNRG				30	1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT1001RBNR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT1001R1BNR Abstract: 1001R1 Contextual Info: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	apt1001rbnr apt1001r1bnr 001r1 -100m +2o-247ad 1001r1	PDF
1001r1bn Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR Contextual Info: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG	OCR Scan	apt1001rbnr apt1001r-18nr apt1001r1bnr apt1001r/1001r1 +2o-247ad 1001r1bn	PDF
Contextual Info: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.	OCR Scan	apt1001rbnr apt1001r1bnr apt1001r/1001r1bnr o-247ad +10001s7t	PDF
APT1001RBNR Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	apt1001rbnr apt1001r1bnr apt1001r/1001r1bnr o-247ad	PDF
210 RBN Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR Contextual Info: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg	OCR Scan	apt1001rbnr apt1001r1bnr o-247ad 210 rbn +61001r1bn 1001rbn na 1001 oa 10 diode apt1001 1001r1bnr	PDF
APT*1002R4BN Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0	OCR Scan	o-247 apt1001rbn apt1001r1bn apt1001rbnr +16apt1001r1bnr apt1001r3bn apt1001r6bn apt1002rbn apt1002r4bn apt1002rbnr apt*1002r4bn apt5040bnf fredfet apt802r4bn apt5020bnr apt5085bn apt5020bnf apt5025bn apt6040bnr apt5085bnf	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	ad818 ad818die ad820 ad821 +12ad820die o-204aa/to-3 bd119 bc148a apt1002rbnr 1000 volt npn bd109 apt5025an apt904r2bn bd107 apt1001r3an apt1004rbnr	PDF