ZVN212 Search Results

ZVN2120

Abstract: ZVN2120G DSA003736
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS ON - 10Ω ZVN2120G ✪ D S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C

Contextual Info: ZVN2120C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

ZVP2120

Abstract: ZVP2120G ZVN2120G DSA0037407
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS on =25Ω ✪ PARTMARKING DETAIL – COMPLEMENTARY TYPE – ZVP2120 ZVN2120G ZVP2120G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

ZVN2120A

Abstract: DSA003782
Contextual Info: ZVN2120A ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 4 0.5A 0.1A 6 8 10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts)

Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * PARTMARKING D E T A IL -Z V N 2 1 2 0 Z -N 1 0 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage V Continuous Drain Current @ Tam b=25°C Id VALUE ds U N IT 200 V 0.27 A A Pulsed Drain C urrent

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 O_ FEATURES * 200 V o lt V DS * Ros.onpzsa PARTM ARKING DETAIL - ZVP2120 CO M PLEM ENTARY TYPE - ZVN2120G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

Contextual Info: Not Recommended for New Design Please Use ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZVN2120

Abstract: ZVN2120B
Contextual Info: plessey s e n i c o n d /d i s c r e t e 7220533 "t5 PLESSEY SEMICOND/DI SCRETE d F | ? 22GS33 □□□Sbbl □ 95D 0 5 6 6 1 T- N-channel enhancement mode vertical DMOS FET 3J-o? ZVN2120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

2120Z

Abstract: SOT89N
Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * PARTM ARKING DETAIL - ZVN 2120Z - N10 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current @ Tamb=25°C Pulsed Drain Current Gate-Source Voltage M ax Power D issipation @ Tamb=25’C

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS on =25Ω ✪ PARTMARKING DETAIL – COMPLEMENTARY TYPE – ZVP2120 ZVN2120G ZVP2120G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

ZVN2120A

Abstract: fet to92 ZVN2120C
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 200 UNIT V

Contextual Info: ZVN2120Z Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)270m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-55

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 3 - OCTOBER 1995 ZVP2120G O_ — " FEATURES * 200 Volt V DS * RDs onr25G P A R T M A R K IN G D E T A IL - ZVP2120 C O M P L E M E N T A R Y TY PE - ZVN2120G ABSOLUTE M A X IM U M RATINGS.

Contextual Info: bGE D • WUST* DD07Ô3S *17 4 ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive

ZVN2120A

Contextual Info: Obsolete. Alternative is ZVN0124A. ZVN2120A ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 4 0.5A 0.1A 6 8 10 ID(On)-On-State Drain Current (Amps)

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS ON - 10Ω ZVN2120G ✪ D S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-So ur ce Vo l t ag e

Contextual Info: ZVN2120A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: ZVN2120B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)460m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

ZVN2120

Contextual Info: R5D ZETEX S E M I C O N D U C T O R S T CI70S70 O D D S b b l J> =i • ZETB 95D 0 5 6 6 1 T - 3 ? -o ? N-channel enhancement mode vertical DMOS FET ZVN2120 FEATURES Compact geometry Fast switching speeds No secondary breakdown Excellent temperature stability

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET o FEATURES: * VDS - 200V * n •. ^DS ON ‘ 10ÎÎ w PARTMARKING DETAIL - ZVN2120 K s s D Q ABSOLUTE MAXIMUM RATINGS. VALUE UNIT PARAMETER SYMBOL Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamtp25°C

Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTM ARKING DETAIL - Z V N 2 1 2 0 Z -N 1 0 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVN2120G D A T A S H E E T ABSOLUTE M A XIM U M RATINGS UNIT VALUE PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current @ Tamb=25'C

Contextual Info: DISCONTINUED PLEASE USE ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)