ZVN2120Z Search Results

Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * PARTMARKING D E T A IL -Z V N 2 1 2 0 Z -N 1 0 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage V Continuous Drain Current @ Tam b=25°C Id VALUE ds U N IT 200 V 0.27 A A Pulsed Drain C urrent

2120Z

Abstract: SOT89N
Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * PARTM ARKING DETAIL - ZVN 2120Z - N10 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current @ Tamb=25°C Pulsed Drain Current Gate-Source Voltage M ax Power D issipation @ Tamb=25’C

Contextual Info: ZVN2120Z Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)270m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-55

Contextual Info: ZVN2120Z SOT89 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTM ARKING DETAIL - Z V N 2 1 2 0 Z -N 1 0 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVN2120G D A T A S H E E T ABSOLUTE M A XIM U M RATINGS UNIT VALUE PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current @ Tamb=25'C

Diode Mark N10

Abstract: BZV49 diode GF M
Contextual Info: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß

BAW78C

Contextual Info: SOT89 NPN SW ITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter Type hFE VcBO V VCEO V lc cont mA P to t FCX2369A 40 15 500 FCX2369 40 15 500 Part Mark Code v CE(sat) M a x M in/M ax at lc / VCE m A / Volts Volts at lc / lB mA 1.0 40/120 10/1 0.2