WG S 35 Search Results

35725-5110

Contextual Info: SD -35T25-50 I DWG. NO. SIM ILAR ITEM S E C T I ON : C - C ' VIEW A' ° IPR O JEC T NO. S E C T I ON : D - D ' TRADE MARK a b d e 35725-5010 2 .9 2.8 3. 8 3.8 A WG #2 2 - # 2 0 35725-5110 3.6 3.5 5.5 5 .0 A WG #1 8 -#1 4 35725-5210 5. 1 4.6 6.2 6. 1 A WG #1 4 -#1 2

Contextual Info: AirBorn <35 • R O W PC Card to Board or PC Card . 100" WG-WG 160 & 208 Contacts .100 2 PLCS - .150 PLUG 120 DIA THRU (3 PLCS) .120 DIA THRU .190 HEX x .107 DEEP (3 PLCS) (USE SMALL PATTERN # 4 -4 0 HEX NUT) RECEPTACLE DIMENSIONS w ” s e r ie s C o n n e c t o r s

airborn connector wg

Abstract: 208xx
Contextual Info: AirBorn <35 • R O W PC Card to Board or PC Card . 100" WG-WG 160 & 208 Contacts .100 2 PLCS - .150 PLUG 120 DIA THRU (3 PLCS) .120 DIA THRU .190 HEX x .107 DEEP (3 PLCS) (USE SMALL PATTERN # 4 -4 0 HEX NUT) RECEPTACLE DIMENSIONS w ” s e r ie s C o n n e c t o r s

KP 2010

Abstract: M38039G8H-XXXHP
Contextual Info: 3803H Group QzROM version Standard Characteristics Standard Characteristics Example Standard characteristics described below are just examples of the 3803H Group(QzROM version)'s characteristics and are not guaranteed.

WG s 35

Abstract: Scans-048 DSAGER00041
Contextual Info: A WG 33 WG 34 50 0,18 50 0,18 N ETt 200^ 2001) 200 — — — 75 0 -1,5 -18 A Type Uf If Heizart Verw. EP 200’) 200 — 30 200 -1,5 -8 Ua Ug 5 U gi U g3 U g2 U gl la - - 15 2 0,35 0,08 1,2 3,5 24 0,2 2 250 1,5 1 65 1 4,5 3,56) 106) 2000 45 S D — - —

fujitsu hemt

Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Contextual Info: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability

Contextual Info: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability

Contextual Info: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability

60HFU

Abstract: Reduced conduction losses rectifier
Contextual Info: Bulletin 12061 INTERNATIONAL RECTIFIER I« R 60HFU. S E R IE S S U P E R FAST REC T IFIER DIO D E 60 Am p 60ns Major ratings and characteristics 60HFU V WG c VUS Description and Features Units 60 A 82 °C 94 A lFSM 10m s 8 JO A lFSM @ 8 .3 m s 870 A

sd5 355

Abstract: mxj 10 molex 53375 MOLEX mxj a3
Contextual Info: <n s m Q ffSB NOTES Ln 5035 1-8*00 A P P LIC A B L E TERMINAL : 5035 1-8*00 Q i/ 2. D WG . : 53375,53376,53388,53389 v ' J - Z l MATE WITH : 53375,53376,53388,53389 SERIES M ö ir o s s ic M . A APPLY EVEN CIRCUIT PRODUCTS, 4. S S M S f D T 1 LAST DIGIT OF PART NUMEER INDICATES COLOR,

wg 713

Contextual Info: F L C 103 WG C-Ba nd Power GciAs I E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain*Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature

Contextual Info: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability

2SK609

Abstract: NE71084 NE71000M
Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05

Contextual Info: L 15 NOTE MATERIAL HOUSING I D WG . NO. S D -35884 -003 12=5 T & : TERMINAL in ” ? PPS, : U L94V -0 , PHOSPHOR COLOR : BLACK BRONZE PLATING CONTACT TAIL 0 . 8 * 0. 05 _1 1 . 2 * 0 . 0 5 I TEM Au Sn 1) UPPER 2) LOW 0 . 3um 2-3um MISALIGNMENT

MOLEX 3953

Abstract: 5320-60BG3 connector EN 4165 GS47F 5320-NBGS 5320-NBGS17F-GY sd 7402 20bt2 molex 5578 series sd 7404
Contextual Info: 10 a ïs NOTES . l'^ V 'y O ' W I4 Ï Ï z j J W Ê 15/. A U PBTP IJL94V-0 MATERIAL HOUSING G.F. 157. PBTP (UL94V-0) TERMINAL : PHOSPHOR BRONZE K y 'j- y n .2 7 t ' A 1^ ' A W G * 2 6 - *28 ( S S 7 $ ^ ) : A WG* 2 8 2. cW S m S. 6o06 + 0 L 14 MAX. liY S

AD609

Contextual Info: MIS DFtAtfl WG 13 UNPUBLISHED. REVISIONS RESERVED. AMP PR0DU&T5 I REV LOG I D 1ST Ä 0-417T_ ECN AD-4707_ REV PER AD-5064_ A /Y Y Y Y 1 STANDOFFS? 3 TR H U 9 PO SN C2 R E Q D ON O U T S ID E E N D S O F

Contextual Info: b7E i> S A MS UN G E L E C T R O N I C S INC 7^4142 KMM536256W/WG 0015 20 b Ô2Ô • DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536256W is a 256K bitsx36 Dynamic RAM high density memory module. The Samsung

FHX13LP

Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
Contextual Info: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

Contextual Info: WG. Ha 351 —500—0850H REV I JWH I 9/8/00 A BY M U APPO DESCRIPTION NPR 1988 I | .500 l i 0.023 J 0.090 0.120 — 1 / 4 -3 6 U N S-2A THD .250 HEX ,120±.005 NOTES: 1.MATERIALS: CABLE TRIMMING DIMENSIONS BODY: BRASS PER ASTM B16 CONTACT: BERYLLIUM COPPER PER ASTM B196

Contextual Info: B±o. i 0 2 . 8 +oJ SÜ P art f No. MR- S R F X±o.i lsbo$ Plating + MR- ( ) S R F G + LO Silver ¥ Plating O c? Plating Gold ¥ Nil ¥ Y REF. Recommended Size of Mounting Holes £ 1 . ^ i ( i M R - 2 5 S R F (G) + £ * L T M t o £2. A WG # 2 2 JSIT £3.

A47-DHS1-OCT21

Abstract: T21-DHS
Contextual Info: A47-DHS1-OCT21 - Dual O u t p u t Hall Switch S e n s o r Dual Outpu! Hall Switch, 55 gauss operate, npn open collector output. Aluminum 15/32-32 x 1" housing, fre e end Teflon 22A WG wires, I fo o t o o o M agnet S Pole: Output A On M agnet N Pole: Output B On

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V , I d s = 1 0 mA LOW NOISE FIGURE NF= 1.6 d B T Y P a tf = 12GHz HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 24 21 Lg = 0.3 |xm, Wg = 280 |im

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V , I d s = 1 0 mA LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz Lg = 0.3 [im, Wg = 280 \im HERMETIC METAL/CERAMIC PACKAGE

AM/SSC 9500 ic data

Contextual Info: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •