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FHC40LG Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FHC40LG		Eudyna Devices	Super Low Noise HEMT	Original	PDF	83.63KB	5
FHC40LG		Fujitsu	TRANSISTOR,HEMT,N-CHAN,3.5V V(BR)DSS,10MA I(DSS),SOT-173VAR	Scan	PDF	293.76KB	5

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FUJITSU Semiconductor Limited


FUJITSU Semiconductor Limited FHC40LG RF SMALL SIGNAL, FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FHC40LG		160			1 $73.16 10 $73.16 100 $56.70 1000 $56.70 10000 $56.70	Buy Now

FHC40LG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
fhc40lg Abstract: 18GHZ low noise hemt FH40LG Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhc40lg fh40lg 2-12ghz 18ghz +1low noise hemt	PDF
fhc40lg Abstract: 18GHZ LG 932 fujitsu hemt Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhc40lg fh40lg 2-12ghz fcsi0598m200 +318ghz lg 932 fujitsu hemt	PDF
fujitsu hemt Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt Contextual Info: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15\|iim, Wg = 280\|iim • Gold Gate Metallization for High Reliability	OCR Scan	fh40lg 2-12ghz fhc40lg fcsi0598m200 +4fujitsu hemt fujitsu transistor hemt 280am low noise hemt	PDF
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhc40lg fh40lg 2-12ghz	PDF
08/bup 3110 transistor Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhc40lg 2-12ghz 08/bup 3110 transistor	PDF
Low Noise HEMT Abstract: Super low noise figure and high associated gain Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhc40lg fh40lg 2-12ghz fcsi0598m200 +2low noise hemt super low noise figure and high associated gain	PDF
FSX52WF Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG Contextual Info: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5	OCR Scan	fhc40lg fhx13lg fhx14lg fhx04lg +8fhx05lg fhx06lg fhx35lg fhr02fh fsx52wf gaas hemts x band fsx017lg fsu01lg	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	flc301xp flc301xp equivalent flk052xp fujitsu gaas fet application note +6iss1b1 cs98e1v6r800-k41d cs98e1v6r000-k41b fujitsu "application notes fjs-ds-158 fll171	PDF
s parameters 4ghz Abstract: S2V 80 Contextual Info: F HC 40 LG Low Noise HEMT ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage vgs -3.0 V Total Power Dissipation Ptot 290 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature	OCR Scan	4000q s parameters 4ghz s2v 80	PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2sa1977 2sa1978 2sc2351 2sc3355 +162sc3357 2sc3545 2sc3583 2sc3585 2sc4093 2sc4094 mrf947t1 equivalent mrf947t1 equivalent transistor nj1006 bfp320 fll120mk fll101me mgf4919g fujitsu gaas fet fhx76lp hpma-2086 mmbr521l	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	fmc141401-02 fujitsu gaas marking code fujitsu k022 fll300-2 +6fll55 fsx52wf fujitsu l101 fujitsu x51 fll200-2 fll300-1	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	flx202mh-12 flk202mh-14 fsx52wf fujitsu "application notes +8fsx51wf nf037 fmc141401-02 fll101 fll171 fmc1414p1-02 fll55 fll120mk	PDF