NE72218 Search Results

Q1104

Abstract: NE72218
Contextual Info: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1

C10535E

Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Contextual Info: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package

Q110

Abstract: 0-22nH
Contextual Info: NONLINEAR MODEL NE72218 SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LD_PKG DRAIN 0.82nH 0.1nH LG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF LS 0.22nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters

MARKING V58

Contextual Info: C TO X BAND N-CHANNEL GaAs MESFET FEATURES NE72218 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 PACKAGE OUTLINE 18 (recessed gate) - 2.1 ± 0 .2 - H .25 ± 0.1 H GATE WIDTH: W g = 400 jim 0-3^0.05 4 PIN SUPER MINI MOLD

ne72218 v58

Abstract: tom 1157
Contextual Info: NEC C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz • NE72218 PACKAGE OUTLINE 18 - 2.1 0 .2 ± - O |to;o5

ne72218 v58

Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3
Contextual Info: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 µm recessed gate • Gate Width : Wg = 400 µm • 4-pin super minimold • Tape & reel packaging only available

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

AM/SSC 9500 ic data

Contextual Info: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •

ne72218 v58

Abstract: NE72218 NE72218-T1 4E12
Contextual Info: NE72218 C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm

Contextual Info: NE72218 Rank 59 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LD_PKG DRAIN 0.82nH 0.1nH LG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF LS 0.22nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters

gunn diode ghz s-parameter

Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.

ne72218 v58

Abstract: NE72218-T1 NE72218-T2 C10535E NE72218 VP15-00-3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

AV to rf converter

Abstract: CD Pick-Up head RF remote control rgb led PD780205 PC3202 rgb lcd interface SCK VARISTOR PC2798GR UPD63702 car front camera
Contextual Info: APPLICATION AV Audio Amplifier VCR Servo Controller Digital DBS #1 Mini Stereo Component Camcorder Digital DBS #2 Compact Disk Player (Low end Model) Digital Video Camcorder Transceiver Block for Digital Cable Modem/CATV Set-top-box Portable CD Player Digital Still Camera

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

X13769XJ2V0CD00

Abstract: PC1891A R78K0 PC1099 2SC470-3 2SC4703 PTO01 NE3210 PWM lcd TV PD784036
Contextual Info: AV アプリケーション オーディオ・アンプ VTR（サーボ制御） ディジタルDBS #1 ミニコンポ カメラ一体型VTR ディジタルDBS #2 コンパクト・ディスク・プレーヤ（普及機） ディジタル･ビデオ･カメラ

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of