VTB5051UV Search Results

Contextual Info: VTB Process Photodiodes VTB5051UV PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have

VTB5051UVJH

Abstract: uv led 365 D9202 22001 UV led 200 nm peak
Contextual Info: VTB Process Photodiodes VTB5051UVJH PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead

Contextual Info: VTB Process Photodiodes VTB5051UVJH PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead

uv led 365

Abstract: 220nm VOC application Circuit VTB5051 VTB5051UVH
Contextual Info: VTB Process Photodiodes VTB5051UVH PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have

uv led 365

Abstract: VTB5051UVJ
Contextual Info: VTB Process Photodiodes VTB5051UVJ PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead

Contextual Info: VTB5051UV VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a dual lead TO-5 package with a UV trans­ mitting “flat” window. Cathode is com­ mon to the case. These diodes offer very high shunt resistance and good

Contextual Info: VTB5051UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14A Planar silicon photodiode in a three lead TO -5 package with a U V transmit­ ting “flat” window. Chip is isolated from case. The third lead allows case to be

Contextual Info: VTB Process Photodiodes VTB5051UVJ PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead

Contextual Info: VTB Process Photodiodes VTB5051UVH PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have

uv led 365

Abstract: VTB5051UV
Contextual Info: VTB Process Photodiodes VTB5051UV PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

uv led 365

Abstract: 10H3 VTB5050UV VTB5051UV
Contextual Info: V T B 5 0 5 0 U V , 51 UV VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a dual lead T O -5 package with a UV transm it­ tin g 'fla t' window . Cathode is common

VTB5050UV

Abstract: VTB5051UV
Contextual Info: SbE D • I BGBDbG'ì 0DD1G43 H b f l M V C T VTB5050UV, 51 UV VTB Process Photodiodes E G 8. 6 VACTEC PACKAGE D IM EN SIO N S inch mm [ PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a dual lead T O -5 package with a UV transm it­ ting “fla t1w indow . Cathode is common

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

UV led 200 nm peak

Abstract: uv led 365 VTB5050UVJ VTB5051UVJ
Contextual Info: £fc E D 30301,0^ 0001Q44 VTB Process Photodiodes IVCT 3T4 VTB5050UVJ, 1UVJ E G & G VACTEC PACKAGE DIMENSIONS neh (mm) PRODUCT DESCRIPTION CASE U A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planarsilicon photodiode in athree lead TO-5 package with a UV transmitting

Contextual Info: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from

5041J

Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
Contextual Info: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with