C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-footc1383 npn transistor collector base and emitternpn transistor c1383c1383 transistor+7c1383 npn transistorlight-dependent resistor specificationc1983 transistorpin configuration of c1383 transistorlhi968lhi878c1383
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vt400
Abstract: VT43N2 VT43N1 VT43N3 VT43N4
Contextual Info: V T 4 0 0 Series PHOTOCONDUCTIVE CELL PACKAGE DIMENSIONS inch mm .3 60 (9.14) .070 (1.78) 1.38 (35.05) AWG 24 TINNED COPPER LEADS LEAD DIA. & PLASTIC COATING NOT CONTROLLED WITHIN .10 (2.5) OF CERAMfC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE ABSOLUTE MAXIMUM RATINGS
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VT43N2
Abstract: VT43N1 vt400 VT43N3 25C16 VT43N4
Contextual Info: Photoconductive Cell VT400 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Demand (20 minutes) Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 400 600 8.0
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VT43N1
Abstract: VT43N3
Contextual Info: Photoconductive Cell VT400 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Demand (20 minutes) Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 400 600 8.0
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VT43N1
Abstract: K300 k 300 VT43N2 EG*G Vactec K3030
Contextual Info: VT400 Series PHOTOCONDUCTIVE CELL PACKAGE DIMENSIONS inch mm PLASTIC COATED TO / PROTECT ACTIVE SURFACE -> NOT CONTROLLED WITHIN . 10 (2.5) 0 F CERAMIC SUBSTRATE. ABSOLUTE MAXIMUM RATINGS RATING PD 400 mW 600 mW A P d / AT 8.0 mW/°C Ta - 40 to +75 °C CONTINUOUS POWER DISSIPATION
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vt400r10/r100vt43n1vt43n2+6vt43n3vt43n4k300k 300eg*g vacteck3030
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automatic dimmer headlight using ldr
Abstract: smoke DETECTOR CIRCUIT DIAGRAM using LDR room light brightness control depends upon sunlight intensity project for free LDR 03 PHOTO RESISTOR PerkinElmer ldr VT43N2 VT93N2 phototransistor application lux meter VT93N1 AUTOMATIC ROOM LIGHT WITH LDR
Contextual Info: Optoelectronics Lighting Imaging Telecom Sensors Detectors and Sensors Photoconductive Cells and Analog Optoisolators Vactrols Specialty Lighting Digital Imaging Telecom Sensors . . Optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, IR
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d-65199ca-274automatic dimmer headlight using ldrsmoke detector circuit diagram using ldr+8room light brightness control depends upon sunlight intensity project for freeldr 03 photo resistorperkinelmer ldrvt43n2vt93n2phototransistor application lux metervt93n1automatic room light with ldr
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Photoconductive Cell
Abstract: VT900 VT83N1 VT43N1 VT43N2 VT93N1 VT83N3 VT83N2 VT23N1 VT93N3
Contextual Info: Photoconductive Cell VT900 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 80 1.6 mW mW/°C TA –40 to +75
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vt900r10/r100vt53n1vt53n2+10vt53n3photoconductive cellvt83n1vt43n1vt43n2vt93n1vt83n3vt83n2vt23n1vt93n3
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