VTB4051 Search Results

Contextual Info: VTB Process Photodiodes VTB4051 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

Contextual Info: VTB4051 VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes offer very high shunt resistance and good blue response.

VTB4051

Contextual Info: VTB4051 VTB Process Photodiodes ¡ PACKAGE DIMENSIONS inch mm CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes offer very high shunt resistance and good blue response.

VTB4051

Abstract: ceramic photodiode case 13
Contextual Info: VTB Process Photodiodes VTB4051 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

Contextual Info: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

VTB4051H

Contextual Info: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTB4050

Abstract: VTB4051
Contextual Info: 5bE D aOBQbQS 0 0 0 1 0 3 b S5û « V C T VT B4050, 4051 VTB Process Photodiodes _ E G 8. G V A C T E C PACKAGE D IM EN SIO N S inch mm .305 .067 (1 .7 0 ) (7 .7 S ) CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

4051 application photodiode

Abstract: VTB4050 VTB4051
Contextual Info: 5bE T> BDBObO'i □ □ □ 1 0 3 b B B S H V C T VTB Process Photodiodes V T B 4 0 5 0 , 4051 _ E G 8. G VACT EC PACKAGE DIMENSIONS inch mm .3 0 5 ( 7 . 7 5 ) CASE 13 PRODUCT DESCRIPTION Isc CHARACTERISTIC Short Circuit Current TCIsc Isc Temp. Coefficient