VTB5050 Search Results

VTB5050UV

Abstract: VTB5051UV
Contextual Info: SbE D • I BGBDbG'ì 0DD1G43 H b f l M V C T VTB5050UV, 51 UV VTB Process Photodiodes E G 8. 6 VACTEC PACKAGE D IM EN SIO N S inch mm [ PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a dual lead T O -5 package with a UV transm it­ ting “fla t1w indow . Cathode is common

VTB5050J

Abstract: VTB5051J 5051j
Contextual Info: 5bE D 3 D 3 D b O cl 0 0 0 1 0 M 2 VTB Process Photodiodes E G 8> 6 521 VCT VTB5050J, 5051J VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “flat" win­ dow, three lead TO-5 package. Chip is isolated from the case. The third lead

UV led 200 nm peak

Abstract: uv led 365 VTB5050UVJ VTB5051UVJ
Contextual Info: £fc E D 30301,0^ 0001Q44 VTB Process Photodiodes IVCT 3T4 VTB5050UVJ, 1UVJ E G & G VACTEC PACKAGE DIMENSIONS neh (mm) PRODUCT DESCRIPTION CASE U A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planarsilicon photodiode in athree lead TO-5 package with a UV transmitting

Contextual Info: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from

uv led 365

Abstract: 10H3 VTB5050UV VTB5051UV
Contextual Info: V T B 5 0 5 0 U V , 51 UV VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a dual lead T O -5 package with a UV transm it­ tin g 'fla t' window . Cathode is common

VTB5051

Abstract: 3500/04 B5050 VTB5050
Contextual Info: SbE 3D30bCH D G00104Q VTB Process Photodiodes E G 75*1 - - 4 ISI I VCT V T B 5 0 5 0 , 5051 & G VACTEC PACKAGE DIMENSIONS inch mm CASE 14 PRODUCT DESCRIPTION TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a “flat" window, dual lead TO-5 package.

VTB5050

Abstract: VTB5051
Contextual Info: SbE D E 3Q 3 Q b C n Q Q 0 1 Q 4 0 7 5 e! « V C T 'r " -4 l VT B5050, 5051 VTB Process Photodiodes E G & G VACT EC PACKAGE DIMENSIONS inch (mm ri CASE 14 PRODUCT DESCRIPTION Planar silicon photodiode in a "flat" window, dual lead TO-5 package. Cathode is common to the case. These

5051

Abstract: dual photodiode VTB5050B VTB5051B
Contextual Info: SbE D 3 0 3 0 b [ n 0 G G 1 0 4 1 b'iS VCT V T B 5 0 5 0 B , 5 0 51 B VTB Process Photodiodes E G & 6 VA CT EC PACKAGE DIMENSIONS inch mm CASE 14 PRODUCT DESCRIPTION Planar silicon photodiode in a “flat" win­ dow, dual lead TO-5 package. The package incorporates an infrared rejec­

VTB5050B

Abstract: VTB5051B
Contextual Info: SbE T> m 303DbDT 0001041 b'IS » V C T / V T B 5 0 5 0 B , 5051 B VTB Process Photodiodes E G & G VACTEC P A C K A G E D IM E N S IO N S inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) P R O D U C T D E S C R IP T IO N Planar silicon photodiode in a “flat" win­

VTB5050J

Abstract: VTB5051J VTB505U 5051J PIR 320 Vactec 25 PIR 148
Contextual Info: BQBQbO'î 0001042 521 « V C T 5bE » VTB Process Photodiodes V T B 5 0 5 0 J , 5 0 51 J E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “fla f win­ dow, three lead TO-5 package. Chip is isolated from the case. The third lead