3030B Search Results

Contextual Info: E G & G/CANADA/OPTOELEK 47E 3030blG D GGQ0332 I CANA 1 F Series FND-100;FNP-100Q;FOD-100 T4/-53 Features • • • High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Large Active Area Wide Spectral Range Low NEP Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

Contextual Info: E G & G/CANADA/OPTOELEK M7E ì> • 3030bl0 000031Ô ICANA 7 TCN-1000 Series -93; -12; -3 t -Hì -67 Features • • Built-in Low Noise Am plifier S hielded Feedback Loop Large Active Area Shielded Am plifier • • Low Offset W id e Spectral R ange Operating Data and Specifications at 23°C

Siecor

Abstract: 1300 nm LED SIECOR Fiber Optics Siecor 62.5 1300 nm LED chips C86065E-13 C86057E-13 C86057E-14 C86065E-14 C86067E
Contextual Info: n c /i E G & G/CANA PA / O P TOELEK IDE D 3030b]i0 GQGDD37 T ICANA INFRARED EMITTER PACKAGE LOW PROFILE OIL DATA SHEET C 86065E-13 • 1300 nm LED, Multi Mode Pigtail C 86065E-14 • 1300 run LED, Single Mode Pigtail C 86067E • 820 nm LED LOW PROFILE DIL PACKAGE

CS6051

Abstract: SIECOR Fiber Optic cable RCA Solid State siecor C86051EW1 C86051EW2 C86051EW3 C86051EW4 RCA Solid State power devices SIECOR Fiber Optics
Contextual Info: E fi & G / C A N A D A / O P T O E L E K IO ]> 3030blG DD0GGL.5 <122 « C A N A C86051E Series GaAIAs Injection Lasers Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors

VTB9412B

Abstract: VTB9413B VTB9414B
Contextual Info: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in

VTB6060J

Abstract: VTB6061J Vactec 6061J
Contextual Info: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack­

SIECOR Fiber Optic cable

Abstract: siecor C30617E EG*G Optoelectronics Siecor 62.5 C30986E C86081E-13 C86081E-14 1300 nm LEDs SIECOR Fiber Optics
Contextual Info: E fi 8. G / C A N A D A / O P T O E L E K 4?E T> 3030bl0 OODOET? 3 I CANA t-fl-O l OPTOELECTRONICS C86081E Series Our 100% quality screening tests include a stabilization bake at 85°C for a minimum of 10 hours, burn-in and thermal shock: 5 cycles, -20 to +70°C.

MIL-STD-2020

Contextual Info: E G & 6/CANADA/0PT0ELEK M7E T> m 3030bl0 000032B 1 • CANA YAG Series_ ~r-<//-53 Features • • • • Planar Diffused Large A rea W ide Dynam ic R ange > 5 0 % DC Quantum Efficiency at 1064 nm • Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width

Contextual Info: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

VTB6060B

Abstract: VTB6061B
Contextual Info: 5bE D 3030b0S DODlOHb 177 H V C T V T B 6 0 6 0B , 6061 B VTB Process Photodiodes E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­

VTT1112

Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)

photovoltaic cell

Abstract: Vactec Vactec 25
Contextual Info: S£.E D 3030bCH DD01103 7b2 M V C T VTS-2 Process Photodiodes E G & G VACTEC VTS 9 1 , 92, 93 _ P R O D U C T D E S C R IP T IO N T-41-51 P A C K A G E D IM E N S IO N S inch mm Large area planar silicon photodiodes suitable for use in the photovoltaic

sg3001

Abstract: 2l688 "rca application note" AN4469 904nm laser rca eg and g laser diode AN-4993 10-dimensional rca 036
Contextual Info: E G & G/CANADA/OPTOELEK n IO D • 3030bl0 0000070 SÛO M C A N A "T”- V/- Solid State f l * MW Electro Optics and Devices I f b f l E lectro O p t lC S SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output

Vactec 25

Abstract: Vactec phct VTT-C60
Contextual Info: 3030bDti GQOliab 7 3 4 5t>E D .060" NPN Phototransistor Chip V TT-C 60 E G & G VACTEC C H IP D IM E N S IO N S inch mm> D E SC R IP T IO N EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are

1012 opamp

Abstract: kss 215
Contextual Info: E G & G/CANADA/OPTOELEK 3030blD 0DDD32b b • CANA 47E D HAD Series 1100A T -W -6 7 Features • • Built-in High Speed Amplifier Groundable Case • Shielded Amplifier • Offset Null Control • • W ide Spectral Range Large Active Area Operating Data and Specifications at 23°C

VTE3175L

Abstract: VTE3176L
Contextual Info: SbE D m 3030bG^ 0DD1EE1 GaAIAs Infrared Emitting Diodes VTE3175L, 3176L Coax Package w/ Cathode Lead — 880 nm 8. E G bb^ H V C T _ G VACTEC T ~ 4 \ “ J3 PACKAGE DIMENSIONS inch mm DESCRIPTION CASES COAX HERMETIC (WITH CASE LEAD) CHIP SIZE: .011 ’ *.011"

sg3001

Contextual Info: E G & G/CANADA/OPTOELEK n A IO » • 3030bl0 0000070 SflO ■ CANA'7”- Solid State J V ElectroOptics and Devices Electro Optics SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output at ¡f m * 4 0 A and T c * 27° C —

Contextual Info: E fi i G / C A N A D A / O P T O E L E K R G i l Optics IO D WÊ 3030blD OOOOObM TTb H C A N A NEW SLETTER PRELIMINARY DATA SHEET SERIES C86048 AND C86070 1060 nm Pulsed Lasers Desiqned and characterized primarily for simulation of Nd/YAG lasers, the diodes are offered in TO-5 outline with window or fiber piqtail.

Contextual Info: LED Middle POWER 3030BSLxx Series LED Middle POWER 3030 Product Data Sheet BSLxx Series Created Date : 12 / 24 / 2013 Revision : 2.0, 3/4/2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED Middle POWER 3030BSLxx Series 1. Description

Pyroelectric Detectors

Abstract: J15TE HgCdTe judson PA-100 judson PA-090
Contextual Info: E G & G 3TE T> m JUDSON J15TE Series 3030b0S 00 002 37 7 B J U D Long-Wave Mercury Cadmium Telluride Detectors 10.6 jam T - V / 'V / General • J15TE Series "Long-Wave" detectors are photoconductive HgCdTe elements on thermoelectric coolers for C 0 2 laser

Contextual Info: G & IDE D G/CANADA/OPTOELEK I t C / l 3030bl0 QÜGDD37 T ICANA 7e y / - ° INFRARED EMITTER PACKAGE LOW PROFILE OIL DATA SHEET C86065E-13 • 1300 nm LED, Multi Mode Pigtail C86065E-14 • 1300 nm LED, Single Mode Pigtail C86067E • 820 nm LED LOW PROFILE DIL PACKAGE

Contextual Info: LED Middle POWER 3030BZLxx Series LED Middle POWER 3030 Product Data Sheet BZLxx Series Created Date : 07 / 25 / 2013 Revision : 1.0 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED Middle POWER 3030BZLxx Series 1. Description The LiteON 3030 Product series is a wide beam angle standard-dimension package, combining the lifetime and reliability

Contextual Info: SbE D 3030b0^ ODGlGbB E S b IVCT VTP100A VTP Process Photodiodes E 6 8, G VACTEC T-41-51 PACKAGE D IM EN SIO N S inch mm .7 5 ( 1 9 . 1 ) CATH ODE M ARK 4 5 ° X .0 3 5 ( 0 . 8 9 ) - , r• M IN IM U M \T(T57)f . 2 3 0 (5 . 8 4 ) SE N SIT IV E CATHODE . 2 1 0 (5 . 3 3 )

Contextual Info: 5bE D 3030b0^ 0001102 fiSb H V C T VTS VTS-2 Process Photodiodes 86, 87, 90 E G & G VACTEC PRODUCT DESCRIPTION T-41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes suitable for use in the photovoltaic mode, but may be used with a small