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    TE Connectivity PRDDD1-16F-BB000

    - Trays (Alt: 1571113-1)
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    Avnet Americas PRDDD1-16F-BB000 Tray 30 Weeks, 1 Days 1,000
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    Newark PRDDD1-16F-BB000 Bulk 1,000
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    TME PRDDD1-16F-BB000 20
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    Master Electronics PRDDD1-16F-BB000 369
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    TE Connectivity PRDDD1-16F-BB000 958 1
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    Vyrian PRDDD1-16F-BB000 7,230
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    Abracon Corporation AMPMDDD-11.0590

    MEMS Oscillator, 11.059 MHz, SMD, 2.5mm x 2mm, 25 ppm, 3.3 V, AMPM - Bulk (Alt: AMPMDDD-11.0590)
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    Avnet Abacus AMPMDDD-11.0590 113 Weeks 1,000
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    Abracon Corporation AMPMDDD-11.2896T

    MEMS Oscillator, 11.2896 MHz, SMD, 2.5mm x 2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMDDD-11.2896T)
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    Avnet Americas AMPMDDD-11.2896T Tape & Reel 1,000
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    Abracon Corporation AMPMDDD-11.0592

    MEMS Oscillator, 11.0592 MHz, SMD, 2.5mm x 2mm, 25 ppm, 3.3 V, AMPM - Bulk (Alt: AMPMDDD-11.0592)
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    Avnet Americas AMPMDDD-11.0592 Bulk 1,000
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    Avnet Abacus AMPMDDD-11.0592 113 Weeks 1,000
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    Abracon Corporation AMPMDDD-11.0590T

    MEMS Oscillator, 11.059 MHz, SMD, 2.5mm x 2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMDDD-11.0590T)
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    Avnet Americas AMPMDDD-11.0590T Tape & Reel 1,000
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    DDD11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: EUPEC blE D • 3MD3ST7 DDD1131 T71 ■ U P E C TZ 425 N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspannung repetitive peak forw ard off-state and reverse voltages


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    ddd1131d001134 PDF

    DDD11

    Abstract: A 1941
    Contextual Info: DDD11 page 1 2 3 4 5 sheet 011241-a 011241-b 020342-a 020342-b FP date 1941 1941 1942 1942 2000.03.04


    Original
    ddd11011241-a011241-b020342-a+2020342-ba 1941 PDF

    STA411A

    Abstract: TIC 160 M TIC 31 DDD11E
    Contextual Info: SANKEN ELECTRIC CO LTD SSE ]> 7^0741 DDD11EÔ LTT « S A K J STA411A Silicon NPN Triple Diffused Planar •Maximum Ratings . Item Ta = 25“C Symbol Ratings Unit Collector-to-B ase Voltage VCBO 60 V C ollector-to-E m itter Voltage VCEO 60 V Em itter-to-Base Voltage


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    ddd11esta411asta300sta400+345maxtic 160 mtic 31 PDF

    Contextual Info: ADVANCED POWER TECHNOLOGY b3E D • QES7TOT DDD112G 637 MAVP A dvanced pow er Te c h n o l o g y APT806R5KN 800V 2.0A 6.50fl POWER MOS IV' N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT806R5KN UNIT 800


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    ddd112gapt806r5kno-22qac PDF

    Contextual Info: V T C IN C -9398929 V T C INC cn 99D . j> r| T 3 flfl‘i 2 cl DDD113E D 01132 r - S 2-3 V54AC643 V74AC643 O C T A L BUS TRAN SCEIVERS WITH 3-STATE O U TPU TS FEATURES •High Speed, 4ns Typical •Ini /I o h “ 24mA Commercial, UL 24mA Military


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    ddd113ev54ac643v74ac643 PDF

    VTT1112

    Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
    Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)


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    3030bchddd11vtt1112t-41-61+5vtt1113vtt1114transistor t2s0 205 001 040transistor c 4161 PDF

    EUPEC powerblock tt142

    Abstract: EUPEC tt 170 n 14 EUPEC TT 56 n 12 EUPEC POWERBLOCK TD powerblock tt 60 N EUPEC tt 106 n 16 EUPEC tt 142 n 16 powerblock TD 170 N DT142N I300
    Contextual Info: LIE EUPEC 34032=17 D DDD11Q2 170 IUPEC TT 142 N, TD 142 N, DT 142 N Elektrische Eigenschaften Electrical properties M a x im u m ra ted v a lu e s Mdrm.V rrm P e rio d is c h e V o rw ä rts - u n d R ü c k w ä rts -S p itz e n s p e rrs p a n n u n g re p e titiv e p e a k fo rw a rd o ff-s ta te


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    tt142dt142neupec powerblock tt142eupec tt 170 n 14+7eupec tt 56 n 12eupec powerblock tdpowerblock tt 60 neupec tt 106 n 16eupec tt 142 n 16powerblock td 170 ni300 PDF

    Contextual Info: GENNUn CORP HflE » GENNUM C O R P O R A T I O N 3T3S763 DDD1116 T2b • LTIC Class A Amplifier with 2 DC Coupled Gain Blocks & Schottky Diodes GK5G9 PRELIMINARY DATA SHEET 7~Z. FEATURES DESCRIPTION • 100 nA typical current drain The GK509 is a Class A amplifier utilizing Gennum’s


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    3t3s763ddd1116gk509 PDF

    Vactec

    Abstract: DDD11 VTT1112 VTT1113 VTT1114
    Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)


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    3030bchddd11vtt1112t-41-61+3vtt1113vtt1114vactec PDF

    42321

    Abstract: 7424A
    Contextual Info: SQEbfl7E DDD111S Eb3 • T H C M SSE D O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX THX 7424A 150 PIXEL SWIR MULTIPLEXED LINEAR ARRAYS FOR SPECTROSCOPY APPLICATION THOMSON MIL ET SPATIAUX DESCRIPTION The THX 7424A is a module of 150 InGaAs photodiodes and associated CCD readout circuits, issued of the develop­


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    ddd111si02bfl72dg01125thx7424a+6thx7424avaathx7424avabthx7424avacthx7424avad423217424a PDF

    Contextual Info: bSE T> m ÛUALITY SEMICONDUCTOR INC 74bbñ03 DDD11SÜ 3S2 QSFCT153T, 253T, 2153T, 2253T Q S54/74FCT153T Q S54/74FCT253T High-Speed CMOS Dual 4 Input Multiplexers Q Q S54/74FCT2153T Q S54/74FCT2253T FEATURES/BENEFITS • Pin and function compatible to the 74F153/253


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    ddd11sqsfct153t2153t2253t+6s54/74fct153ts54/74fct253ts54/74fct2153ts54/74fct2253t74f153/25374fct153/253 PDF

    TCN75MOA

    Contextual Info: PRELIMINARY INFORMATION ïelwom Semiconductor, Inc. TCN75 2-WIRE SERIAL TEMPERATURE SENSOR AND THERMAL MONITOR FEATURES GENERAL DESCRIPTION • The TCN75 is a serially programmable temperature sensor that notifies the host controller when ambient tem­ perature exceeds a user-programmed setpoint. Hysteresis


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    tcn75250jatcn75moa PDF

    BR17

    Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


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    tms320c6474sprs552hc6474850-mhz+4tms320c64x16-/32-bitddr2-667br17 PDF

    GMSK wireless data transmission

    Abstract: BT 199 DDD11 FX589 FX589D5 FX589DW FX589P bt 137 good FX589 Application Notes
    Contextual Info: eooq = 3 CML Semiconductor Products PRODUCT INFORMATION FX589 Low-Voltage/High-Speed GMSK Modem Publication D/589/5 December 1995 Features Applications • • Wireless LAN/Modems • Handy Data Terminals • Low-Power Wireless Data Link for PCs, Laptops and Printers


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    fx58940kb/sstd-18d/589/5+9fx589dw24-pinfx589d5gmsk wireless data transmissionbt 199ddd11fx589pbt 137 goodfx589 application notes PDF

    transistor d880

    Abstract: BR17
    Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


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    tms320c6474sprs552ec6474850-mhz+5tms320c64x16-/32-bitddr2-667transistor d880br17 PDF

    Contextual Info: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used


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    psx160psx128bpsx96bhas27+1ddd11sg PDF

    CY7C006

    Abstract: CY7C016
    Contextual Info: fax id: 5207 ,.V.Ï.Ï.V.^ y nr' CY7C006 CY7C016 Æ C Y P R E S S 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow s im u ltan eo u s read s o f th e s a m e m e m o ry location 16K x 8 o rg an iza tio n C Y 7 C 00 6


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    cy7c006cy7c01665-micron68-pin+464-pin7c00680-pin7c016 PDF

    NSf39

    Abstract: IR 0251 CY7C024 CY7C0241 CY7C025 CY7C0251 017L
    Contextual Info: fax id: 5206 CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True D u al-P o rted m em o ry ce lls w h ich allow s im u ltan eo u s reads of th e s a m e m e m o ry location • 4K x 16 o rg an iza tio n C Y 7 C 02 4


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    cy7c024/0241cy7c025/0251cy7c024cy7c0241+7cy7c025cy7c025165-micron84-leadnsf39ir 0251017l PDF

    Contextual Info: LM78L00 Series 3-Terminal Low Current Positive Voltage Regulators Semiconductor t h r e e -t e r m in a l l o w c u r r e n t p o s it iv e v o l t a g e r e g u l a t o r s The positive LM78LOO voltage inexpensive, Series of cousins, these regulators feature


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    lm78l00lm78loo PDF

    Contextual Info: MIVR 4 2 0 5 4 NEGATIVE HIGH VOLTAGE REGULATOR Designed for use in general purpose power supplies with high input voltages • Output current to 5 amps Input voltage to -65V D.C. Internal short circuit protection, foldback and current limiting Excellent line and load regulation


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    42051ure120wattsat25bll2b40ddd11e5 PDF

    TA 7818 S voltage regulator

    Abstract: 7818 CT lm 7809 to-92
    Contextual Info: PCI LM7800 Series 3-Terminal Fixed Voltage Regulators Semiconductor [t h r e e -t e r m in a l These voltage I p o s it iv e v o l t a g e r e g u l a t o r s regulators are monolithic compensation. With adequate heatsinking they can deliver output currents in excess of 1.5 ampere.


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    lm7800lm78xx20ma-ta 7818 s voltage regulator+27818 ctlm 7809 to-92 PDF

    DDA09

    Contextual Info: CYM7232 CYM7264 DRAM Accelerator Module PRELIMINARY CYPRESS SEMICONDUCTOR Features • 4-megabyte to 1-gigabyte control ca­ pability • 32- or 64-bit bus interface M7232 only • 32* or 64-bit EDC versions — 1-bit correct; 2-bit detect • Multiplexed or non-multiplexed bus


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    cym7232cym726464-bitm7232+540-mhz25-nsread/80-nsinhibitym7232sdda09 PDF

    Contextual Info: fax id: 5206 W CYPRESS CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description True Dual-Ported memory cells which allow simultaneous reads of the same mem ory location 4K x 16 organization CY7C024


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    cy7c024/0241cy7c025/0251cy7c024cy7c0241+4cy7c025cy7c025165-micron84-lead PDF

    Contextual Info: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un­


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    o-218o-202o-220br601 PDF