VCEO 100V IC 0.5A Search Results

TIP127 Application Note

Abstract: TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A

2SA1644

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1644 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)

2SA1645

Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1645 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A)

2N5738

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5738 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation

2N5740

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5740 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation

Contextual Info: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ・High Collector Breakdown Voltage : VCEO=100V(Min.)

2N5611

Abstract: 2N5612 100v audio amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5611 DESCRIPTION •DC Current Gain: hFE= 30-90@IC= -2.5A ·Wide Area of Safe Operation ·Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·Complement to Type 2N5612

BDT60AF

Abstract: BDT60BF BDT60CF BDT60F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors DESCRIPTION •DC Current Gain -hFE = 750 Min @ IC= -1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF

NPN Transistor VCEO 80V 100V

Abstract: BDT41AF BDT41BF BDT41CF BDT41F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF

tip42c

Abstract: TIP42 datasheet tip42 tip41 Inchange semiconductor TIP42B data sheet tip41 file type TIP42 transistor download datasheet TIP42/42A/42B/42C transistor TIP42 TIP42A
Contextual Info: INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= -0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- TIP42; -60V(Min)- TIP42A -80V(Min)- TIP42B; -100V(Min)- TIP42C

BDT88F

Abstract: BDT82F BDT84F BDT86F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F

BDT87F

Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F

transistor 31C

Abstract: BDT31 NPN Transistor VCEO 80V 100V BDT31A BDT31B BDT31C BDT32
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C

BDT85

Abstract: BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87

2SA1646

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1646 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·Fast Switching Speed ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@IC= -6A APPLICATIONS ·This type of power transistor is developed for high-speed

NPN Transistor VCEO 80V 100V

Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF

Contextual Info: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)

TRANSISTOR tip122

Abstract: TIP122 tip122 data TRANSISTOR tip122 features
Contextual Info: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)

TIP122

Abstract: transistor tip 122 equivalent transistor tip122
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TIP122 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCe=3V, IC=3A. • High Collector Breakdown Voltage : VcEO=100V(Min.)

2sc4024

Abstract: VEBO-15V M.P transistor FM20
Contextual Info: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO VCEO 50 V VEBO 15 V IC 10 A hFE IB 3 A VCE(sat) PC 35(Tc=25°C) W fT Tj 150 °C COB VCB=10V, f=1MHz –55 to +150 °C 10.1±0.2 VCB=100V 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA

2A 40V NPN

Abstract: 150v 3A pnp BSW68A bu326
Contextual Info: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz

2N6718

Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
Contextual Info: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter

semelab 2N6287

Abstract: 2N6300J 2n6278 to63
Contextual Info: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz

2N5682

Abstract: 2n5680
Contextual Info: 2N5681 2N5682 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )