BDT31AF Search Results

BDT31AF Datasheets (2)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BDT31AF		Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	34.78KB	1
BDT31AF		Philips Semiconductors	Silicon Epitaxial Base Power Transistors	Scan	PDF	182.12KB	7

BDT31AF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NPN Transistor VCEO 80V 100V Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF	Original	bdt31f/af/bf/cf/df bdt31f bdt31af bdt31bf +4bdt31cf bdt31df bdt32f/af/bf/cf/df npn transistor vceo 80v 100v	PDF
Contextual Info: • BDT32F; 32AF BDT32BF; 32CF^ BDT32DF bbSBTBl 0 0 M 7 0 S 1 ■ N AMER PHILIPS/DISCRETE 2SE D J V T-zz-n SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed	OCR Scan	bdt32f bdt32bf bdt32df ot186 +5bdt31f bdt31af bdt31bf bdt31cf bdt31df	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	sc08b transistor f6 13003 equivalent transistor bj 131-6 transistor eb 13003 bm +7bb112 smd transistor code marking 2f 6n a1211 lg cqy58 bu705 transistor 131-6 bj 026 philips om350	PDF
32-AF Abstract: eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F Contextual Info: • 1^53131 0011705 1 ■ BDT32F; 32AF 55E J> N AMER PHILIPS/DISCRETE BDT32DF 32° Fr y ^ T-3S-J SILICON EPITAXIAL P O W E R TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed	OCR Scan	bb53131 bdt32f bdt32bf bdt32df +8ot186 bdt31f bdt31af bdt31bf bdt31cf bdt31df 32-af eto81	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	lcd01 bgy41 bfw10 fet transistor cqy58 +7germanium rx101 equivalent components fet bfw10 bd643 bf199 283 to92 600a transistor zener phc	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	ba220 ba221 ba223 ba281 +16ba314 ba315 ba316 ba317 ba318 ba423 fet bfw10 kp101a fet bfw11 bdx38 kpz20g cqy58a bfw10 fet rpw100 b0943 of fet bfw11	PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbs3131 blu52 1n321 byw56 +131n321a blv97 1n322 txd10k40 txd10k60 bt1690 bt808 1n5004 txd10h60 mp8706 txc10k40 bstc1026 bt13g	PDF