UPD4 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

lh62256

Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Contextual Info: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s

Contextual Info: UPD43256BGX-B12-EJA 1/2 IL16 ∗∗∗∗∗ C-MOS 256k (32kx8) BIT STATIC RAM –TOP VIEW– OE A11 A9 A8 A13 WE A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC VDD (+2.7 to 5.5V) GND NC A0-14 ; ADDRESS INPUTS I/O1-18 ; DATA INPUTS/OUTPUTS

Contextual Info: UPD482445G5-60 1/2 IL08D C-MOS 4M-BIT DUALPORT GRAPHICS BUFFER —TOP VIEW— 30 1 VDD DT/OE IN 2 3 GND 70 SC 69 SE IN 31 IN 32 33 GND 68 34 SIO0 I/O 4 67 SIO15 W0/IO0 I/O 5 66 W15/IO15 SIO1 W1/IO1 I/O I/O 6 7 8 VDD I/O 65 SIO14 39 64 W14/IO14 40 I/O W15/IO15

Contextual Info: UPD4713ACX IL08 * MOS INTEGRATED CIRCUIT RS-232 LINE DRIVER / RECEIVER - TOP VIEW - 1 V DD +5V C 4 + 24 2 C1 + GND 23 3 Vcc C 4 – 22 4 C1 – Vss 21 20 D CON STBY 5 300Ω D IN1 6 300Ω D IN2 7 300Ω D IN3 8 R OUT1 9 R OUT2 10 R OUT3 11 5kΩ

Contextual Info: UPD4564163G5-A10B-9JF IL08 C-MOS 64 M 1 M WORD x 16-BIT x 4 -BIT DRAM —TOP VIEW— 1 VDD DQ0 2 3 QVDD GND 54 53 DQ15 QGND 52 INPUT A0 - A13 CAS CKE CLK DQ1 4 51 DQ14 CS DQ2 5 50 DQ13 LDQM 6 QGND QVDD 49 DQ3 7 48 DQ12 DQ4 8 47 DQ11 9 QVDD QGND 46 DQ5 10

STATIC RAM 6264

Abstract: 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L UPD4464G-15
Contextual Info: 94 6 4 K X m & ít CC> UPD4368CRAA-20 NEC uP04464G-12 NEC UPD4464G-12L TAAC « NEC 0— 70 TCAC max ns nax (ns) 20 20 120 120 TOE max (ns) CMOS 4 -, + TOH min (ns) y TOD nax (ns) y TWP min (ns) S t a t i c It TDS min (ns) TDH min (ns) TWD min (ns) TWR sa>:

TA1024

Contextual Info: NEC NEC Electronics Inc. //PD 43501 1,024-C H A N N E L TIM E DIVISION SW ITCH Description Features The/uPD43501 is a tim e-sw itch device designed fo r use in a high-perform ance digital com m unications net­ work. Features include a tim e-switch function by

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-452AB644 2M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AB644 is a 2,097,152 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 16 M SDRAM : ,uPD4516821 are assembled.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,uPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).

nec 14t tv

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / uPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /UPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The ,uPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The ^¡PD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jU P D 4 5 2 5 6 4 4 1 , 4 5 2 5 6 8 4 1 , 4 5 2 5 6 1 6 3 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 3 1 5 3 2 L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MPD432232L 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

0829A

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random -access memory, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT UPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The ,uPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT UPD434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-458CD641LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CD641 LS is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM: ,uPD4564163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic