TT218 Search Results

dec 5534 diode

Contextual Info: Trimmable IC Voltage Controlled Amplifiers Preliminary TT2181 Series FEA TURES AP PLI CA TIONS • Wide Dynamic Range: >120 dB · Faders · Wide Gain Range: >130 dB · Panners · Exponential dB Gain Control · Compressors · Low Distortion: ~0.0025% (typical 2181A)

transistor packages sot93

Contextual Info: IS O W A T T P A C K A G E S IN F O R M A T IO N S ISO W A TT218 AND ISO W ATT220 EASY TO USE ISO LATED POWER PACKAGES General SGS-THOMSON has developed two isolated pack­ ages, the ISOW TT218 and the ISOW ATT220 for use in place of the standard SOT-93/TO-218 and

IRFP150

Abstract: C4023 GC527 IRFP150FI c2814 TC08 Tc03s
Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: STW 9 NA60 S T H 9 N A 6 0 FI S G S -T H O M S O N [M O ig œ ilL ie ra *® N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STW 9N A60 STH 9N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 0 .8 Q. < 0 .8 Q. 9.5 A 6.4 A TYPICAL RüS(on) = 0.69 Cl

Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYP E V STW 5N A90 S TH 5N A90FI dss 900 V 900 V R d S ( o ii ) < 2.5 Q. < 2.5 Q. Id 5.3 A 3.5 A • TYPICAL RüS(on) =2.1 £2

BU208A

Contextual Info: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . STM PREFERRED SALESTYPES . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED TT218 PACKAGE U.L. FILE# E817 3 4 (N . JEDECTO-3 METAL CASE. APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR

Contextual Info: STW7NA90 STH7NA90FI N - CHANNEL 900V - 1 ,05£2 - 7 A - TO-247/TT218 _ FAST POWER MOS TRANSISTORS PRELIMINARY DATA TYPE S TW 7N A90 STH7N A90FI V dss RDS on Id 900 V 900 V < 1.3 a < 1.3 a 7 A 4 .7 A TYPICAL R D S (on) = 1 .05 Î2 . ± 30V GATE TO SOURCE VOLTAGE RATING

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

LEMO

Abstract: MTH40N06 MTH40N06FI C50CR s-6059
Contextual Info: r z * 7 7 S C S -T H O M Mm M S O N M T H 4 0 N 0 6 g g g L g g r o g g i _M T H 4 0 N 0 6 F I - 'T T ^ r H O M s o r T N - C H A N N E L E N H A N C E M E N T PO W ER TYPE V DSS ^D S on (D MTH40N06 MTH40N06FI 60 V 60 V 0.028 ß 0.028 fi

airbag control unit

Abstract: gc352
Contextual Info: STH60N10 STH60N10FI SGS-THOMSON RÆOOi@[llL[l SÏB ÎMD©i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 S TH 60N 10FI V d ss R DS(on Id 100 V 100 V 0.025 Ü 0.025 a 60 A 36 A . . • . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

75n06

Abstract: GC230 GC35 TT218 STH75N06FI
Contextual Info: STH75N06 STH75N06FI SGS-THOMSON ]D ^©|[LlCTi©^ iJ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH75N06 STH75N06FI . . . . . . . . V dss R D S o n 60 V 60 V 0.014 i l 0.014 Sì 75 A 48 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANC HE TESTED

IRFP 450 application

Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
Contextual Info: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5

STH5N90

Abstract: STH5N90FI TT218
Contextual Info: SGS-THOMSON ;[LJOT «S STH5N90 STH5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH5N90 STH5N90FI V d ss R ds oii Id 900 V 900 V 2.4 £2 2 .4 a 5 .3 A 3 .5 A ; . . . • . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

14N50

Abstract: STW14N50 sd 431 transistor dq45c SGS-THOMSON 435 14N50F
Contextual Info: 7 ^ 2 3 7 Ü Ü M S 'iS l b ö T « S Ü T H Gl SGS-THOMSON i^OTi «S STH14N50/FI STW14N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 14N50 S TH 14N50FI STW 14N50 . . • . ■ ■ V dss RDS on Id 500 V 500 V 500 V < 0.45 £2 < 0.45 £2 < 0.45 n

Contextual Info: BU208D BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED TT218 PACKAGE U.L. FILE# E817 3 4 (N . JEDECTO-3 METAL CASE . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE

BU931

Contextual Info: SGS-THOMSON [¡» œ ^ ie ra « BU931/BU931P BU931 PFl HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPO LARTECHNOLO GY . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES APPLICATIONS . HIGH RUGGEDNESS ELECTRONIC IGNITIONS

Contextual Info: STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85ÎÎ - 9.1 A - TO-247/TT218 FAST POWER MOS TRANSISTOR TYPE S TW 9N A 80 S TH 9N A80FI • . . . . . . V dss R D S o n Id 800 V 800 V < 1 .o n < 1 .o n 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING

SGSD00030

Abstract: transistor TE 901 equivalent
Contextual Info: • _ / = ^ 7 7 ^ 5 3 7 ooaw a T S G S -T H O M S O N # Q f f ln o fô m iC T « ! g ■ S G ^ T '3 3 ' Z . 0 _ S D 0 0 0 3 0 /3 1 S G S-THOMSON 3QE /3 1 F I ] HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESC RIPTIO N The SGSD00030.SGSD00031 and SGSD00031 FI

Contextual Info: STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 iì - 18.4A TO-247/TT218 PowerMESH MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STW 18N B 40 STH1 8N B40FI 400 V 400 V < 0.26 a < 0.26 a 18.4 A 12.4A • TYPICAL RDS(on) = 0.19 . EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: Zjï SGS-THOMSON ¡[LieraMe STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss R d S oii Id S T W 5 N A 1 00 S T H 5N A 1 00 F I 1 0 00 V 1 0 00 V < 3 .5 Q. < 3 .5 CÌ 4 .6 A 2 .9 A TYPICAL R D S (on) = 2.9 Î2

BU931ZP

Abstract: BU931ZPFI BU931Z SC-03S I25-C 7T2TS37 BU931 HRE60
Contextual Info: SGS-THOMSON GWfômiOTOKS BU931Z/BU931ZP BU931ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN PO W ER DARLINGTON PRELIMINARY DATA . VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER • HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES APPLICATIONS

TsE 151

Abstract: transistor irfp IRFP152 IRFP150 IRFP 150fi IRFP P CHANNEL IRFP150FI IRFP151 IRFP transistors
Contextual Info: _ 30E D m 7CJ2C1537 GQS^ÖSS 2 • ^ T 7'3 0 |-|3 7 SCS-THOMSON Mmi[LEg¥[E«P g§ L 1 _ S" TH0MS0N TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Vpss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V IRFP 150/FI-151/FI IRFP 152/FI-153/FI

BUV48B equivalent

Abstract: Buv48b transistor BUX 48C BUX48B Z60 transistor buv48c equivalent bux48c sum BUV48BFI BUV48C BUX48C
Contextual Info: _.J1._7121237 005^001 S G S -T H O M S O N 1 » ^ q 1 L [ E 1 « « S 0 • H ^ - 3 3>-\ S _ B U X 4 8 B /V 4 8 B /V 4 8 B F I B U X 4 8 C /V 4 8 C /V 4 8 C F 1 S G S-TH0MS0N 30E D HIGH VOLTAGE POWER SW ITCHING DESCRIPTION The BUX48B/C, BUV48B/C and BUV48BFI/CFI are