ATT220 Search Results

Rectifier t2d

Abstract: t2d diodes T2D 53 BYW29 BYW29-200 BYW29F-200 ISOWATT220AC "T2D"
Contextual Info: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORW ARD LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ HIGH SURGE CURR ENT CAPABILITY ■ HIGH AVALANC HE ENERGY CAPABILITY ■ INSULATED VERSION (ISOW ATT220AC)

Contextual Info: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ VERY LOW FORWARD LOSSES . ■ ■ ■ NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGYCAPABILITY INSULATED VERSION (ISO W ATT220AC ):

ATT220AC

Abstract: BYW80 BYW80-200 BYW80F-200 ISOWATT220AC
Contextual Info: SCS-THOMSON BYW80ÇF HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION ISOW ATT220A C ): Insulating voltage = 2000 V DC

transistor packages sot93

Contextual Info: IS O W A T T P A C K A G E S IN F O R M A T IO N S ISO W A TT218 AND ISO W ATT220 EASY TO USE ISO LATED POWER PACKAGES General SGS-THOMSON has developed two isolated pack­ ages, the ISOW ATT218 and the ISOW ATT220 for use in place of the standard SOT-93/TO-218 and

IRF830

Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI
Contextual Info: 7^237 00HS7Db SÜD • SGTH SCS-THOMSON G IRF830FI IRF831/FI ILlûï^MOûS ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V < 1.5 £2 < 1.5 n 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V < 1.5 £2

HA 1137

Abstract: STP60N05 STP60N05FI
Contextual Info: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2

IR D4-D4

Abstract: STPS1535F ISOWATT220AC STPS1535D STPS1545D STPS1545F 1545F SEB1
Contextual Info: —# SGS-THOMSON k7 w* KfflD g @[iEUl(gTn^®[RiiD s STPS1535D/F STPS1545D/F POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY

Contextual Info: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: 7^2^237 *rJ 004b3flS ITO • SGTH SGS-THOMSON i[iJOT «§ STP21N05L STP21N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP21N 05L STP21NQ5LFI . • . . . . • . R D S o n Id < 0.085 n < 0.085 Q 21 A 14 A dss 50 V 50 V TYPICAL Ros(on) = 0.065 Q

Contextual Info: S G S -T H O M S O N ¡m e ra « ¿ 5 7 S T P 3 N 100 S T P 3 N 1 0 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S T P 3 N 1 00 S T P 3 N 1 00FI . • . . . . R DS on dss 1000 V 1000 V Id < 5 0 < 5 0 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED

Contextual Info: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY

Contextual Info: L78M00 SERIES POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive

Contextual Info: B Y W 2 9 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ATT220AC): Insulating voltage = 2000 V DC

Contextual Info: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q

Contextual Info: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q

Contextual Info: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: rz T ^ 7# V B 921ZV V B 921ZVFI s g s -th o m s o n HIGH VOLTAGE IGNITION COIL DRIVER POWER IC ADVANCE DATA . NO EXTERNAL COMPONENT REQUIRED . INTEGRATED HIGH VOLTAGE CLAMP . COIL CURRENT LIMIT INTERNALLY SET . HIGH RUGGEDNESS DESCRIPTION The VB921ZV and VB921ZVFI are monolithic

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

ATT220

Abstract: VNB10N07 VNK10N07FM VNP10N07FI VNV10N07
Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T YPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ V c lamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I l im 10 10 10 10

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein: