ATT218 Search Results

transistor packages sot93

Contextual Info: IS O W A T T P A C K A G E S IN F O R M A T IO N S ISO W A TT218 AND ISO W ATT220 EASY TO USE ISO LATED POWER PACKAGES General SGS-THOMSON has developed two isolated pack­ ages, the ISOW ATT218 and the ISOW ATT220 for use in place of the standard SOT-93/TO-218 and

Contextual Info: Attenuators Type N DC -1 8 GHz Precision Performance Frequency: DC • 18.0 GHz, DC -12.4, and DC - 8.0 units available Attenuation Values: 1 - 60 dB as noted Attenuation Accuracy: 1 - 6 dB ± 0 .3 dB 7 - 20 dB 21 - 40 dB 41 - 60 dB + 0.5 dB + 0.7 dB +1.5 dB

irfp240

Abstract: irfp240 circuit diagram IRFP240FI 71513 schematic diagram UPS irfp240f
Contextual Info: 2 ^ 5 3 7 0 0 4 S 733 S 3 T • SGTH SCS-THOMSON IRFP240 IRFP240FI ID MaiOT(ö MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP240 IRFP240FI . ■ . . V dss RüS(on) Id 200 V 200 V < 0.18 n < 0.18 Q 20 A 12 A TYPICAL RDS(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.

Contextual Info: STW7NA90 STH7NA90FI N - CHANNEL 900V - 1 ,05£2 - 7 A - TO-247/ATT218 _ FAST POWER MOS TRANSISTORS PRELIMINARY DATA TYPE S TW 7N A90 STH7N A90FI V dss RDS on Id 900 V 900 V < 1.3 a < 1.3 a 7 A 4 .7 A TYPICAL R D S (on) = 1 .05 Î2 . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: _ • r r 7 S ^ 7# T G q S g q - T a a ? H a O p g M a S b O B i b ■ _ N B U T 1 3 / 1 3 P /1 3 P F I [« ^ o m tE C T lH M n o S S G S-THOMSON 3QE D HIGH VOLTAGE POWER SWITCH ■ HIGH POWER ■ INTEGRATED SPEED-UP DIODE

508df

Abstract: BU508D schematic diagram sgs 508d 508D bu208d datasheet TO-218AC Package transistor BU508D ATT218 BU208D BU508D
Contextual Info: BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED

1F42

Abstract: F424 IF424 F324 tf flyback transformer tv F324-SGSIF324-SGSF424-SGSIF424 SGSF324 SGSF324-SGSIF324-SGSF424-SGSIF424 NPN Transistor 600V TO-220
Contextual Info: 7*35^ 537 a D S q ifc .5 T -1 3 -Î3 6 SG S F324/IF324 SG S F424/IF424 SGS-THOMSON S G S-THOMSON 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTO RS ■ HOLLOW EM ITTER TECHNO LO G Y ■ H IG H V O L T A G E FO R O F F -L IN E A P P L IC A ­

BUT13

Abstract: BUT13P I3315 5607 transistor BUT13PFI BUT13P equivalent lb 385 IC circuit diagram
Contextual Info: / = T ^ 7# S G S -T H O M S O N M ^ gm [EC T[H «n(gS S G B U T 1 3 / 1 3 P /1 3 P F I S - T HO MS ON 3QE D HIGH VOLTAGE POWER SWITCH • HIGH POWER ■ INTEGRATED SPEED-UP DIODE IN TER N A L S C H EM A TIC DIAG RAM DESC RIPTIO N The BUT13 , BUT13P and BUT13PFI are silicon

STH60N05

Contextual Info: * SGS-THOMSON L[IOT MS r J STH60N05 STH60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N05 STH60N05FI V dss R DS on Id 50 V 50 V 0.023 Ï2 0.023 n 60 A 36 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

TIP418

Abstract: T1P31C T1P32C tip120 to-220 npn darlington
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A

BUW32A

Abstract: BUW32AP BUW32 BUW32 equivalent
Contextual Info: SGS-THOMSON * ^ 2m [ I O T ( Q K S B U W 3 2 / 3 2 P /3 2 P F I B U W 3 2 A / 3 2 A P /3 2 A P F I HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUW32/A, BUW32P/AP and BUW32PFI/APFI are silicon multiepitaxial mesa PNP transistors mounted respectively in TO-3 metal case, TO-218

75n06

Abstract: GC230 GC35 TT218 STH75N06FI
Contextual Info: STH75N06 STH75N06FI SGS-THOMSON ]D ^©|[LlCTi©^ iJ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH75N06 STH75N06FI . . . . . . . . V dss R D S o n 60 V 60 V 0.014 i l 0.014 Sì 75 A 48 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANC HE TESTED

IRFP 450 application

Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
Contextual Info: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5

STH9N80FI

Abstract: STH9N80 wn s
Contextual Info: 0045^07 EGT • S G T H SGS-THOMSON [M gil(Q iyi(§^(ôMûS STH9N80 STH9N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STH9N80 STH9N80FI ■ ■ . . . ■ . V dss RDS(on) Id 800 V 800 V <1n < 1 £2 9A 5.6 A TYPICAL Rd s m = 0.87 £2 AVALANCHE RUGGED TECHNOLOGY

STH8NA60FI

Contextual Info: £jï SGS-THOMSON ULKgraMOeS STH8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TH 8N A60 S TH 8N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 1 Q. < 1 Q. 8 A 5 A TYPICAL RDS(on) = 0.92 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

STH6NA80FI

Abstract: sth6na80
Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS STH6NA80 STH6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V S TH 6N A80 S TH 6N A80FI • . . . . . . dss 800 V 800 V RDS on Id < 2 .4 Q. < 2 .4 Q. 5 .4 A 3 .4 A TYPICAL R D S (on) = 1.8 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

STHV82

Abstract: sthv 82
Contextual Info: £jï 82 82 SGS-THOMSON ULKgraMOeS STHV STHV FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STHV82 S TH V82FI 800 V 800 V • . . . . . . RDS on < 2 0 < 2 0 Id 5 .5 A 3 .6 A TYPICAL RDS(on) = 1 -65 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

15n50

Abstract: STH15N50 STW15N50 STH15N50FI ISOWATT218
Contextual Info: _71S1237 QG45T2fl T33 • S G T H STH15N50/FI STW15N50 SGS-THOMSON ilIO T « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 STH15N50FI STW 15N50 . ■ . . ■ . V dss RDS on Id 500 V 500 V 500 V < 0.4 Î2 < 0.4 n < 0.4 fi 15 A 9 .3 A

15NA50

Contextual Info: ¿57 TYP E STH15NA50 STH15NA50FI STW 15NA50 S GS-THOMSON ¡[LiCTIiMOOS STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss RDS on Id 500 V 500 V 500 V < 0.4 a < 0.4 a < 0.4 Q. 14.6 A 9.3 A 14.6 A • TYPICAL RDS(on) = 0.33 Q.

Contextual Info: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

SGSD00030

Abstract: transistor TE 901 equivalent
Contextual Info: • _ / = ^ 7 7 ^ 5 3 7 ooaw a T S G S -T H O M S O N # Q f f ln o fô m iC T « ! g ■ S G ^ T '3 3 ' Z . 0 _ S D 0 0 0 3 0 /3 1 S G S-THOMSON 3QE /3 1 F I ] HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESC RIPTIO N The SGSD00030.SGSD00031 and SGSD00031 FI

equivalent bd439

Abstract: BUW32A BUW32 BD439 EQUIVALENT 7R2R237 transistor 2Ap BUW32 equivalent ISOWATT218 ISOWATT218 PNP 32PFI
Contextual Info: • QDB6615 5 ■ S C S -T H O M S O N tM Û ^ IL g Û IT [«P @ S S G S-THOMSON 'T 3 '3 - 'Z _ 1 > _ B U W 3 2 / 3 2 P /3 2 P F 1 B U W 3 2 A /3 2 A P /3 2 A P F I 3QE » HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUW32/A, BUW32P/AP and BUW32PFI/APFI

Contextual Info: Attenuators Type N DC -1 8 GHz Precision Performance Frequency: DC -18.0 GHz, DC -12.4, and DC - 8.0 units available Attenuation Values: 1 - 60 dB as noted Attenuation Accuracy: 1 - 6 dB +0.3 dB 7 - 20 dB 21 - 40 dB 41 - 60 dB + 0.5 dB + 0.7 dB + 1.5 dB Impedance: so Ohms