SGSD00030
Abstract: transistor TE 901 equivalent
Contextual Info: • _ / = ^ 7 7 ^ 5 3 7 ooaw a T S G S -T H O M S O N # Q f f ln o fô m iC T « ! g ■ S G ^ T '3 3 ' Z . 0 _ S D 0 0 0 3 0 /3 1 S G S-THOMSON 3QE /3 1 F I ] HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESC RIPTIO N The SGSD00030.SGSD00031 and SGSD00031 FI
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sgsd00030sgsd00031o-218isowatt218+2500mstransistor te 901 equivalent
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D100E
Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
Contextual Info: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same
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sgsp321sgsp352buv48bu508a+9sgsd00035sgsd00039sgsd00031bu810d100eic uc3842buv48 seuc3842 application 600vbu508
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mje520
Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50
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bd433mje200mje520bd435+152n49212im51902im6037mje521mje180bd135sgs1f444sgsd00030e13008but232m3771but62buw42ap2n5337buw32ap
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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bd135bd136bd137bd138+16bd139bd140bd142bd144bd157bd158je350je180mj13004tp33cbd325je172bdx48je340bd160but55
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u810 diode
Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810
Contextual Info: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con
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sgsp321sgsp352buv48bu508a+10sgsd00035sgsd00039sgsd00031bu810u810 diodediode u810flyback uc3842 power supplybuv48 seu810bu508
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2M3055
Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047
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2n30552n37152n37162n3771+162m37722n37912n37922n42342n43982n43992m3055b0w94cmje5202m588613007 hfmj 130082n5337iu 1047tip120 pnpbd908
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U/25/20/TN26/15/850/yd 803 ic
Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520
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bd433je200je520d44h1+15d44h2d44c1d44c2d44c32n6288bd435u/25/20/tn26/15/850/yd 803 icbux22mje13005je802tip+317+data+sheetbu808df12n5337s130032n6057
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