STP55N Search Results

stp55nf06

Abstract: STB55NF06L STB55NF06L-1 STP55NF06L STP55NF06LFP
Contextual Info: STP55NF06L - STP55NF06LFP STB55NF06L - STB55NF06L-1 N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET II POWER MOSFET TYPE STP55NF06L STP55NF06LFP STB55NF06L STB55NF06L-1 • ■ ■ VDSS RDS on 60 V 60 V 60 V 60 V <0.018 Ω <0.018 Ω <0.018 Ω

STB55NF06-1

Abstract: mosfet stp55nf06 STP55NF06 AND ITS EQUIVALENT STB55NF06FP STP55NF06 STB55NF06 STP55NF06 Datasheet STP55NF06FP
Contextual Info: STP55NF06 STB55NF06-1 STP55NF06FP N-CHANNEL 60V - 0.017 Ω - 50A TO-220/TO-220FP/I2PAK STripFET II POWER MOSFET TYPE STP55NF06 STB55NF06-1 STB55NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V <0.022 Ω <0.022 Ω <0.022 Ω 50 A 50 A 26 A TYPICAL RDS(on) = 0.017 Ω

DM 1265

Abstract: S1265 STP55NF03L D55A
Contextual Info: STP55NF03L N-CHANNEL 30V - 0.01Ω - 55A TO-220 STripFET POWER MOSFET TYPE STP55NF03L • ■ ■ ■ VDSS RDS on ID 30 V <0.013 Ω 55 A TYPICAL RDS(on) = 0.01 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE DESCRIPTION

P55NE

Abstract: P55NE06 O-220F 0022 morocco p55ne06l p55ne0 p55ne06lfp STP55NE06L STP55NE06LFP stp55ne06
Contextual Info: STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY

Contextual Info: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q

MOSFET 55NF06

Abstract: 55nf06 st mosfet 55NF06
Contextual Info: STP55NF06 - STP55NF06FP STB55NF06-1 N-CHANNEL 60V - 0.017Ω - 50A TO-220/TO-220FP/I2PAK STripFET II MOSFET PRELIMINARY DATA • ■ ■ ■ ■ TYPE V DSS R DS on ID STP(B)55NF06(-1) 60 V < 0.022 Ω 50 A STP55NF06FP 60 V < 0.022 Ω 26 A TYPICAL RDS(on) = 0.017 Ω

mosfet stp55nf06

Abstract: STP55NF06FP
Contextual Info: STP55NF06 STB55NF06 STP55NF06FP N-CHANNEL 60V - 0.017 Ω - 55A TO-220/TO-220FP/I2PAK STripFET II POWER MOSFET TYPE STP55NF06 STB55NF06 STB55NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V <0.022 Ω <0.022 Ω <0.022 Ω 50 A 50 A 26 A TYPICAL RDS(on) = 0.017 Ω

STB55NF06

Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω

STP55NE06

Abstract: P55NE06 P55NE morocco P55NE06 p55ne0 P55NE06FP STP55NE06FP
Contextual Info: STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST P55NE06 ST P55NE06FP 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY

P55nf

Abstract: p55nf06 OF P55NF06 b55nf Mosfet P55NF06 for p55nf06 P55nf*06 P55NF0 B55NF06 P55NF06FP
Contextual Info: STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features TAB TAB Order code VDSS RDS on max. 60 V < 0.018 Ω STB55NF06 STP55NF06 ID 50 A 3 1

STP55N06L

Abstract: STP55N06LFI STP55N06LFI morocco
Contextual Info: STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP55N06L STP55N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.023 Ω < 0.023 Ω 55 A 30 A TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY

TO262-3-1

Abstract: STB55NF03L STB55NF03L-1 STP55NF03L l6811
Contextual Info: STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE STP55NF03L STB55NF03L STB55NF03L-1 • ■ ■ ■ VDSS RDS on ID 30 V 30 V 30 V <0.013 Ω <0.013 Ω <0.013 Ω 55 A 55 A 55 A TYPICAL RDS(on) = 0.01 Ω

Contextual Info: STP55NF06L STB55NF06L STB55NF06L-1 N-CHANNEL 60V - 0.014 Ω - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE STP55NF06L STB55NF06L STB55NF06L-1 • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V <0.018 Ω <0.018 Ω <0.018 Ω 55 A 55 A 55 A TYPICAL RDS(on) = 0.014 Ω

p55nf06

Abstract: Mosfet P55NF06 B55NF06 P55NF06FP for p55nf06 OF P55NF06 "p55nf06" P55nf06 MOSFET P55nf b55nf
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-CHANNEL 60V -0.015Ω - 50A TO-220/FP/D²/I²PAK STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STB55NF06 STB55NF06-1 STP55NF06FP STP55NF06 60V 60V 60V 60V <0.018Ω <0.018Ω

Contextual Info: STP55N06L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)55# I(DM) Max. (A) Pulsed I(D)38 @Temp (øC)100# IDM Max (@25øC Amb)220 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)

STP55N05L

Abstract: TP55N stp55n05 STP55N05LFI
Contextual Info: £jï STP55N05L STP55N05LFI SGS-THOMSON ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TP55N 05L STP55N 05LFI V dss RDS on Id 50 V 50 V < 0 .0 2 3 Q. < 0 .0 2 3 Q. 55 A 30 A TYPICAL R D S (on) = 0.02 £2 . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYP E V S TP55N E06 STP55N E06FP dss 60 V 60 V R d S ( o ii) Id < 0.022 Q. < 0.022 Q. 55 A 30 A . TYPICAL Ros(on) =0.019 £2

STP55NE06FP

Abstract: C3921 STP55NE06 0022 morocco P011C
Contextual Info: STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STP55NE06 STP55NE06FP 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY

STP55NE06L

Abstract: STP55NE06LFP
Contextual Info: STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE STP55NE06L STP55NE06LFP V DSS R DS on ID 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED

P55NE06

Abstract: P55NE P55NE06FP STP55NE06FP p55ne0 aval morocco P55NE06 schematic diagram dc-dc stp55ne06 Part Marking TO-220 STMicroelectronics
Contextual Info: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY

mosfet stp55nf06

Abstract: STB55NF06-1 L9 transistor
Contextual Info: STP55NF06 STB55NF06-1 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I2PAK STripFET II POWER MOSFET TYPE STP55NF06 STB55NF06-1 STB55NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V <0.018 Ω <0.018 Ω <0.018 Ω 50 A 50 A 26 A TYPICAL RDS(on) = 0.015 Ω

p55nf06l

Abstract: P55nf b55nf06l p55nf06 b55nf P55NF0 B55NF06 P55nf*06 b55nf0 STP55NF06L
Contextual Info: STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP55NF06L 60V <0.018Ω 55A STB55NF06L 60V <0.018Ω 55A STB55NF06L-1 60V <0.018Ω 55A • Exceptional dv/dt capability

VBG15NB37

Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
Contextual Info: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06

Contextual Info: STP55N05L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)15 I(D) Max. (A)55# I(DM) Max. (A) Pulsed I(D)38 @Temp (øC)100# IDM Max (@25øC Amb)220 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)