TSOP 50 SOCKET Search Results

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

ECO6

Contextual Info: HYUNDAI HYM572A220 X-Series 2M x 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A220 is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of four HY514400A in 20/26 pin SOJ or TSOP-II, eight HY5118160 42/42 pin SOJ or 44/50 pin TSOP-II and two 16-bit BiCMOS line driver in

Contextual Info: 184PIN DDR400 Unbuffered DIMM 512MB With 32Mx8 CL2.5 JM366D643A-50 Description Placement The JM366D643A-50 is a 64Mx64bits Double Data Rate SDRAM high-density for DDR400. The JM366D643A-50 consists of 16pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048

Contextual Info: 'HYUNDAI HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin

HY5118160

Contextual Info: HYUNDAI HYM572A120 X-Series 1M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A120 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of tw o HY514400A in 20/26 pin SOJ o r TSOP-II, four HY5118160 42/42 pin SOJ o r 44/50 pin TSOP-II and two 16-bit BiCMOS line driver in

RAS 0610

Abstract: ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164 hy51v18164b
Contextual Info: »HYUNDAI HYM5V72A124A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168

Contextual Info: 184PIN DDR400 Unbuffered DIMM 256MB With 32Mx8 CL2.5 JM334D643A-50 Placement Description The JM334D643A-50 is a 32M x 64bits Double Data Rate SDRAM high-density for DDR400.The JM334D643A-50 consists of 8pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048

Contextual Info: 200PIN DDR400 Unbuffered SO-DIMM 256MB With 32Mx8 CL2.5 JM434D643A-50 Placement Description The JM434D643A-50 is a 32M x 64bits Double Data Rate SDRAM high-density for DDR400. The JM434D643A-50 consists of 8pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages, and a 2048

5v RAS 0610

Contextual Info: • HY UN DA I HYM572A124A R-Series Unbuffered 1M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A124A is a 1M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin

Contextual Info: RN ICPAK N uaant Specifications for TSOP Sockets MATERIALS Body: Liquid crystal polymer Plating: TT = 2.03 pm 80 pinch Tin/Lead overall. 1.27 pm (50 pinch) Nickel underplate. Frame: Glass-filled PPS Contact: Copper alloy Holder: Copper alloy Flammability: UL 94V-0

Contextual Info: “H Y U N D A I HYM5V72A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168

hy51v18164b

Contextual Info: "H YU N D A I HYM5V72A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V72A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168

HY5118164

Abstract: F1024
Contextual Info: • H Y UN DA I HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin

Contextual Info: I ^DDS371 000 037 3 b73 TSOP — 32 50 XX Number of Contacts:. 32 — SMT — TT J 50 = .50mm Lead Spacing . Plating _ Blank = Standard Pack 5 parts/pack TP - Tape & Reel (body only) 'Fram es are packaged in vinyl bags ALL DIMENSIONS IN MILLIMETERS ± 0.3 General Tolerance

Contextual Info: 13 Od \ :r " \ V -—< { I T00S371 0000375 44b • O e t a I I ' A* S - l O : 1 ~Q) 1 = Body 2 = Contact 3 = Frame Holder EP TSOP — 40 50 XX — SMT — TT ' ” Number of Contacts: 40 _ T 50 = .50mm — Lead Spacing ~ — ~ . Plating -Blank = Standard Pack (5 parts/pack)

Contextual Info: FINE PITCH SOCKETS Specifications for TSOP Sockets MATERIALS B o d y: Liquid crystal polym er Plating : T T = 2.0 3 pm 80 pinch Tin/Lead overall. F ram e: Glass-tilled P P S 1.27 pm (50 pinch) Nickel underplate. C o n tact: Copper alloy H o lder: C opper alloy

d947

Abstract: hy51v18164b
Contextual Info: • « H Y U N D A I H Y M 5 V 7 2 A 1 2 4 A R - S e r ie s Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168

SL32D6C8M4E-A50V

Abstract: SL32D6C8M4E-A60V
Contextual Info: SL32D6C8M4E-AxxV 8M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D6C8M4E-AxxV is a 8M x 32 bits Dynamic RAM memory module. The module consists of four CMOS 4M x 16 bits DRAMs in 50-pin 400-mil TSOP-II packages mounted

HMD8M32M4EG

Contextual Info: HANBit HMD8M32M4EG 32Mbyte 8Mx32 72-pin EDO Mode 4K Ref. SIMM Design 5V Part No. HMD8M32M4E, HMD8M32M4EG GENERAL DESCRIPTION The HMD8M32M4E is a 8M x 32bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or

HMD8M32F4E

Abstract: 32MByte
Contextual Info: HANBit HMD8M32F4E 32Mbyte 8Mx32 EDO Mode 4K Ref. 100Pin SMM, 5V Design Part No. HMD8M32F4E GENERAL DESCRIPTION The HMD8M32F4E is a 8M x 32bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 100-pin, double-sided, FR-4-printed circuit board. A 0.1uF

Contextual Info: »HYUNDAI HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048bit EEPROM on a 168 pin

Contextual Info: •HYUNDAI HYM5V64124A Q-Series SO DIMM 1M _ X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit

HMD4M32M2EG

Contextual Info: HANBit HMD4M32M2EG 16Mbyte 4Mx32 72-pin SIMM EDO Mode, 4K Refresh, 5V Part No. HMD4M32M2E, HMD4M32M2EG GENERAL DESCRIPTION The HMD4M32M2E is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of two CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin. A 0.1 or 0.22uF decoupling capacitor is mounted on the

HY5118164

Contextual Info: "HYUNDAI HYM564124A R-Series Unbuffered 1M x 64-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of tour HY5118164B in 42'42 pm SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O.inF and