TSOP 48 THERMAL RESISTANCE Search Results

TSOP 48 thermal resistance

Abstract: TSOP 66 Package thermal resistance QFP PACKAGE thermal resistance TSOP 66 thermal resistance thermal resistance standards C8866 TSOP 54 thermal resistance 80p6n TSOP 66 Package 28P2V
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES PACKAGE THERMAL RESISTANCE 5.4 IC PACKAGE THERMAL RESISTANCE Table 2 shows the thermal resistance of representative IC packages. The symbol θja refers to thermal resistance from the chip to the air. Thermal resistance may differ depending on the size of chips in the package. Refer to appendices to our product delivery standards.

TSOP 48 thermal resistance

Abstract: TSOP 48 thermal resistance type1 thin TSOP 8x20 package tray TSOP 32 thermal resistance TSOP 48 package tray JEDEC tray standard 13 Ablestik 12-1 signetics TSOP package tray TSOP1-48
Contextual Info: Signetics Flip Chip Package Data Sheet Signetics Data Sheet Signetics TSOP Type 1 Signetics Thin Small Outline Package Type1 Cross Section View of TSOP Type 1 Mold Compound Gold Wire Lead frame Die Die Attach Adhesive Signetics’ s TSOP Type1 packages are available in 32 - 48 lead counts with 0.50mm lead

TSOP 48 thermal resistance

Abstract: 130C 8361H CY62148 CY62148V JESD22 tsop package MSL
Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 000805 VERSION 1.0 October 2000 32 Lead 400 mil TSOP type ll package and Moisture Level 3 Chip Pac Hyundai Korea CYPRESS TECHNICAL CONTACT FOR QUALITFICATION DATA: Ed Russell Reliability Director (408) 432–7069

TSOP 54 Package

Abstract: TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package
Contextual Info: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor

sac 326

Abstract: tsop 138 6-tsop PGA133-C-S14D-2 PGA240 PBGA352 35 G43-87 G38-96 DIP18-P-300-2 TSOP 48 thermal resistance
Contextual Info: 5. パッケージの熱抵抗 5. パッケージの熱抵抗 5-1. 熱抵抗概要 - 2 5-2. 熱抵抗一覧 - 5 5 1 5. パッケージの熱抵抗 5-1. 熱抵抗概要

land pattern for TSOP 2-44

Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

TSOP-48 pcb LAYOUT

Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

SRAM 54-PIN TSOP

Contextual Info: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns and 25 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor • STORE to QuantumTrap nonvolatile elements is initiated

pioneer PAL 007 A

Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Contextual Info: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

TSOP 54 Package

Abstract: CY14B104L CY14B104N
Contextual Info: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small

Contextual Info: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small

CY14E104N

Contextual Info: PRELIMINARY CY14E104L/CY14E104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: PRELIMINARY CY14E104L/CY14E104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small

CY62167DV30LL-70ZXI

Abstract: 2057-01 Z48A BV48
Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

NTGD4167CT1G

Abstract: mosfet 23 Tsop-6
Contextual Info: NTGD4167C Power MOSFET Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response

Contextual Info: CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S PRELIMINARY 16-Mbit 2048 K x 8/1024 K × 16/512 K × 32 nvSRAM Features • ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L),

CY14B101LA-SZ25XI

Abstract: CY14B101LA-SZ45XI CY14B101LA-SP25XIT
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in

Contextual Info: CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S PRELIMINARY 16-Mbit 2048 K x 8/1024 K × 16/512 K × 32 nvSRAM Features • 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L),

Contextual Info: ADVANCE CY14B102L, CY14B102N 2-Mbit 256K x 8/128K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 256K x 8 (CY14B102L) or 128K x 16 (CY14B102N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S PRELIMINARY 16-Mbit 2048 K x 8/1024 K × 16/512 K × 32 nvSRAM Features • 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L),

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2