12X20 Search Results

3D2D4G72UB3478

Contextual Info: MEMORY MODULE DDR2 SDRam 64Mx72-BGA DDR2 SDRAM MODULE 3D 2D4G72UB3478 4Gbit DDR2 SDRam organized as 64Mx72, based on 64Mx16 Pin Assignment BGA 191 - 12x20 - Pitch 1.27mm Features • Organized as 64Mx72  Core supply voltage 1.8V +/- 0.1V  I/O supply voltage 1.8V +/- 0.1V

48-PIN

Abstract: 12X20
Contextual Info: 48-PIN PLASTIC TSOP I (12x20) detail of lead end 1 48 F G R Q 24 L 25 S E P I A J C S K N S NOTES 1) Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 2) "A" excludes mold flash. (Includes mold flash : 12.4 mm MAX.)

48-PIN

Contextual Info: 48-PIN PLASTIC TSOP I (12x20) detail of lead end 1 48 E S L Q R 24 G 25 F N K S D S I M M B C J A P NOTES 1) Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 2) "A" excludes mold flash. (Includes mold flash : 12.4 mm MAX.)

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

KS32P6632

Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Contextual Info: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor

5hrt

Abstract: 5ht filter DUP3
Contextual Info: TO KO L HELICAL FILTERS/DUPLEXERS 14 \ H e lic a l f ilt e r s fo r c o m m u n ic a t io n e q u ip m e n t îjJI/7 -i Specifications Type 6x11x4.5mm Max. (6x1.5x6.3m m ) Max. 5CHLW 5CHW (6x17.3x6.3mm) Max. (6x11.6x8.3mm) Max. 5 CH T 5HW/5HRW Frequency range

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

48-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32300 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32300 is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode :

48-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16340, 23C16380 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C16340 and µPD23C16380 are 16,777,216 bits mask-programmable ROM. The word organization is

A3 3308

Abstract: ST23L6410 Sitronix
Contextual Info: ST Sitronix ST23L6410 64-Mbit 8M x 8 / 4M x16 Mask ROM FEATURES „ „ „ „ GENERAL DESCRIPTION The ST23L6410 is a wide range operation, 64M-bit, Read Only Memory. It is organized as 8M x 8 bits (byte mode) or Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode)

KME AXIAL CAPACITORS

Abstract: kme series capacitors KME50T101M8X16LL KME Series xl 1507 KME50VB22RM5X11LL kme63t471m12x30ll KME50T4R7M5X12LL KME63T4R7M5X12LL KME16T471M8X20LL
Contextual Info: KME Series UNITED CHEMI-CON • Miniature ■ General Purpose ■ Solvent Proof ■ +105°C Maximum Temperature The KME series capacitors are our standard general purpose capacitors offered with radial or axial lead terminals for selected voltage and capacitance ranges. These capacitors have a rated lifetime of

SXE6.3VB153M18x40LL

Abstract: sxe capacitor sxe series SXE25VB10
Contextual Info: _ I U N IT E D fIcf HI E M I C O N • Miniature ■ Solvent Proof ■ Low Impedance ■ Large Capacitance ■ +105°C Maximum Temperature The SXE series capacitors are designed for use in low impedance situations at high frequencies, switching power supplies for example. These capacitors have many characteristics that make them

200VB

Abstract: United Chemi-Con SME series CAPACITORS CHEMICON SM 50VB10 United SMG JA 472M SMG series
Contextual Info: SMG Series UNITED CHEMI-CON Miniature General Purpose Solvent Proof Large and Small Capacitance +85°C Maximum Temperature The SMG series capacitors are a miniaturized version of the SME series. These capacitors are designed for a load life of 2,000 hours at 85°C with an operating temperature range of -4 0 ° C to

Dolby prologic

Abstract: TC9446F-003 ieee1284 usb IEEE1284 TC240 TC260 TC260C TC260E 576-TBGA dolby DTS
Contextual Info: 東芝半導体情報誌アイ 1999 9月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 c mi Se CONTENTS INFORMATION エレクトロニクスショー’ 99に出展

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n

M29DW323D

Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

Contextual Info: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

IRL 501

Abstract: 63X12 KBSM
Contextual Info: ST • i S S , ffiflB S C D 1 1 T I M id d le a n d h ig h v o lta g e W id e te m p e r a tu r e ( C D 1 1 T S e r ie s ) i'S iB S ' ¡Simuli \ M id d le a n d h igh v o lta g e , W id e te m p e r a tu r e L o w le a k a g e c u rre n t. U s e d in e n e r g y -s a v in g e le c tro n ic b a lla s ts ,

Contextual Info: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors

Contextual Info: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

Contextual Info: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words