S29F200 Search Results

Contextual Info: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors

Contextual Info: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n

Contextual Info: Preliminary information •■ S29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

29f200-90

Abstract: 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T
Contextual Info: H igh Performance 256K x8/128 « I6 X S29F200 Kl SV CMOS Flash FFPROM 2 M e g a b i t 5 V CMOS i-lash EEPROM Preliminary information Features • O rg a n iza tio n : 25 6 K x 8 o r 1 2 8 K x l 6 • Sector a rch itectu re - O n e 1 6K ; tw o 8K ; o n e 3 2 K ; a n d th r e e 6 4 K b y te s e c to rs

Contextual Info: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture

Contextual Info: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n

29f200-90

Abstract: AS29F200T
Contextual Info: Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 o r 1 2 8 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K ; and three 64K byte sectors - Boot code sector architecture— T top or B (b o ttom )

29F400-70

Abstract: 29f400 programming 29F400 9F400 29F400-90
Contextual Info: H ig h P erfo rm a n ce 512KX8/256KX16 5 V CMOS Flash EEPROM - A S29F400 II J ill r 5 1 2 K x 8 / 2 5 6 K x l 6 CMOS Flash EEPROM Preliminary information Features • O rganization: 5 1 2 K X 8 or 2 5 6 K x l 6 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors

29F400-70

Abstract: programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
Contextual Info: A H i y l i P c r f o r n i a i H i' S I2K X 8/2S 6K X SV CM O S •■ I6 Flash F.FPR O M A S29F400 Î I 2 K X 8 / 2 5 6 K X 16 C M O S F l u s h F E P R O M Preliminary information Features • Organization: 512KX8 or 256KX16 • Sector architecture • Low pow er consum ption

.5555b

Abstract: 29f200-90 29F200 flash AS29F200T
Contextual Info: Preliminary information Features • O rgan izatio n : 2 5 6 K x 8 o r 1 2 8 K X 1 6 • L o w p o w e r co n su m p tio n • S ecto r arch itectu re - 4 0 mA m axim um read current - One 16K; tw o 8K; one 3 2K; and three 64K byte sectors - 6 0 mA m axim um program current

Contextual Info: H ig h P e r f o r m a n c e •■ S29F200 II 256KX8/128x I6 SV CM OS Flash FFPROM 2 M e g a b it 5V CM OS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 2 S 6 K x 8 o r 1 2 8 K x l 6 • L o w p o w e r c o n s u m p ti o n - 35 mA m a x im u m read c u rre n t

car ecu microprocessors

Abstract: 29f200-90 AS29F200T
Contextual Info: Hij>h Pi'rfornijMi i aa \S29I 200 A ¿ ' ¡ 6 k x 8 / l 2K K x l 6 SV CMOS Tl.isli H P ROM 2S6 K X 8 / I 2« Kx 16 CMOS Mush l-l.PKOM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 o r 1 2 8 K x 16 • L o w p o w e r c o n s u m p tio n

.5555b

Abstract: 29F200 29f200 70 ALG 2-72 29f200-90 165555H AS29F200T 6kX8 bit memory array
Contextual Info: A Hi” h IVrfnrm am r ¿ 5 6 k x 8 / I Z 8 K x 16 SV C M O S I la sh HB K IP R O M ASZ9I-200 Z ^ K x X / I 2 8 K x 1 6 C M O S ¡'l a s h I I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture - O ne 16K; tw o 8K; on e 32K; and three 64K byte sectors

.5555b

Abstract: 29F200 29F200 flash AS29 29f200 70 08000h-OFFFFh 29F200-55 29f200-90 AS29F200T
Contextual Info: H ig h p e r f o r m a n c e 2 S 6 K X 8 /1 2 8 K X 16 5V CM OS Flash EEPROM a | S29F200 A 2 5 6 K X 8 /1 2 8 K X 1 6 CMOS Flash EEPROM Preliminaiy information Features • O r g a n iz a t io n : 2 5 6 K X 8 o r 1 2 8 K X 1 6 • S e c to r a r c h ite c tu r e