841LMI Search Results

84-1LMI

Contextual Info: NKD-100-D 4 MILLIMETER-WAVE FREQUENCY DOUBLER MMIC 5GHz TO 24GHz Typical Applications • Narrow and Broadband Commercial and • Upconversion Stage used in MW Radio/ Optical Designs Military Radio Designs • Linear and Saturated Radio Applications GENERAL PURPOSE

Contextual Info: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

MARCONI amplifier

Abstract: 84-1LMI NN12 P35-5112-000-200
Contextual Info: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.

Contextual Info: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency

Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

TRANSISTOR R1002

Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing

mmic distributed amplifier

Abstract: 84-1LMI NDA-210-D
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-210-D DC-17 GHz 6000045 Rev. A 1 Features Applications • • • • • • • • Reliable low-cost HBT-based design 6 dB Gain, +12.6 dBm P1dB @ 2 GHz High P1dB of +13.4 dBm at 6.0 GHz and +8.5 dBm at 14.0 GHz

AOZ1022DIL

Abstract: 22-A115-A JESD A114 84-3J AOZ1360AIL 2P3M UMC A115A DFN 4X4 AOZ1360DI 2P3M
Contextual Info: AOS Semiconductor Product Reliability Report AOZ1360AIL/DIL, rev 3 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 26, 2009 1 This AOS product reliability report summarizes the qualification result for AOZ1360AI/AIL (SO8

AOZ1075AI

Abstract: aoz1075 G700HC AOZ107 2a 200v schottky diode AOZ1094DI AOZ1015AI BA004 aoz1094 1015AI
Contextual Info: AOS Semiconductor Product Reliability Report AOZ1016AI/1017AI/1015AI/1019AI/1075AI/1081AI/ 1017DI/1094DI, rev 8 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com October 10, 2008

84-1LMI

Abstract: NN12 P35-5112-000-200
Contextual Info: Data sheet HEMT MMIC LNA 8.5 – 10.5GHz Features • 19dB Gain Typical • 1dB Noise Figure The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.

30SPA0553

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

2Xf transistor

Abstract: TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor
Contextual Info: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 June 2006 - Rev 23-Jun-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing

P1014

Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

15MPA0566

Abstract: 84-1LMI
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier 15MPA0566 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

U1001

Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

P1000 diode

Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain

IC 566 vco

Abstract: 6OSC0460 84-1LMI
Contextual Info: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 6OSC0460 Features Chip Device Layout tio n On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing

Contextual Info: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

inductance R600

Contextual Info: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection

U1000

Abstract: XB1004 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing

mmic distributed amplifier

Abstract: ultrasonic bond 22DSBA0423 84-1LMI
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 22DSBA0423 Features Chip Device Layout tio n Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

L1004

Abstract: 84-1LMI
Contextual Info: 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier L1004 May 2006 - Rev 10-May-06 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 17.0 dB Small Signal Gain 1.8 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing

PL 15 Z EQUIVALENT

Abstract: capacitor 1c5 10C6 12C4 14TX0614
Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power

IC 566 vco

Abstract: vco mimix 7OSC0462 84-1LMI
Contextual Info: 6.4-7.4 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 7OSC0462 Features Chip Device Layout tio n On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing