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    P1014

    Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		aph478p101414-apr-06xp1006/7+6mil-std-883xp1014i000512984-1lmixp1006 bondingghz hpa PDF

    p1014

    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		01-nov-06aph478p1014xp1014+6i0005129xp1006mil-std-883xp1014-bd-000wxp1014-bd-000vxp1014-bd-ev1 PDF

    Chip Advanced Tech

    Abstract: XP1006 XP1006 bonding
    Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		xp1014-bdxp1006mil-std-88301-sep-10+4xp1014i0005129chip advanced techxp1006 bonding PDF

    P1014

    Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		p1014-bd03-aug-07xp1006mil-std-883+8xp1014i0005129xp1014-bd-000vxp1014-bd-ev1p1014dm6030hkts3332ldxp1006 bonding PDF

    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		aph478p101401-nov-06xp1006+6mil-std-883xp1014i0005129xp1014-bd-000wxp1014-bd-000vxp1014-bd-ev1 PDF

    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 May 2005 - Rev 05-May-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		aph478p101405-may-05xp1006/7+3mil-std-883xp1014i0004966 PDF

    xp1014

    Abstract: P1014-BD
    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		14-nov-08p1014-bdxp1014i0005129+4xp1006mil-std-883xp1014-bd-000vxp1014-bd-ev1 PDF

    Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 August 2005 - Rev 03-Aug-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency


    Original     		03-aug-05aph478p1014xp1014+3i0005129xp1006/7mil-std-883 PDF