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XP1006 Datasheets (7)

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Mimix Broadband

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
XP1006		Mimix Broadband	8.5-11.0 GHz GaAs MMIC Power Amplifier	Original	PDF	244.79KB	6
XP1006-BD		Mimix Broadband	8.5-11.0 GHz GaAs MMIC Power Amplifier	Original	PDF	227.29KB	8
XP1006-BD-000V		Mimix Broadband	8.5-11.0 GHz GaAs MMIC Power Amplifier	Original	PDF	227.3KB	8
XP1006-BD-EV1		Mimix Broadband	8.5-11.0 GHz GaAs MMIC Power Amplifier	Original	PDF	227.3KB	8
XP1006-FA		Mimix Broadband	8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin	Original	PDF	229.77KB	6
XP1006-FA-0N00		Mimix Broadband	8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin	Original	PDF	229.77KB	6
XP1006-FA-EV1		Mimix Broadband	8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin	Original	PDF	229.77KB	6

XP1006 Price and Stock

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Lovato Electric Inc


Lovato Electric Inc EXP1006 EXPANSION MODULE EXP SERIES, 2 RELAY OUTPUTS TO INCREASE NUMBER OF STEPS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	EXP1006	Bulk			1	1 $322.60 10 $322.60 100 $322.60 1000 $322.60 10000 $322.60	Get Quote
TME	EXP1006				1	1 $58.63 10 $54.72 100 $54.72 1000 $54.72 10000 $54.72	Get Quote

XP1006 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
XP1006-BD Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech Contextual Info: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing	Original	xp1006-bd mil-std-883 01-sep-10 xp1006 +3x-band gaas phemt mmic chip gaas fet amplifier x-band 10w chip advanced tech	PDF
P1014 Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit	Original	aph478 p1014 14-apr-06 xp1006/7 +6mil-std-883 xp1014 i0005129 84-1lmi xp1006 bonding ghz hpa	PDF
p1014 Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit	Original	01-nov-06 aph478 p1014 xp1014 +6i0005129 xp1006 mil-std-883 xp1014-bd-000w xp1014-bd-000v xp1014-bd-ev1	PDF
Chip Advanced Tech Abstract: XP1006 XP1006 bonding Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing	Original	xp1014-bd xp1006 mil-std-883 01-sep-10 +4xp1014 i0005129 chip advanced tech xp1006 bonding	PDF
P1014 Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	p1014-bd 03-aug-07 xp1006 mil-std-883 +8xp1014 i0005129 xp1014-bd-000v xp1014-bd-ev1 p1014 dm6030hk ts3332ld xp1006 bonding	PDF
XP1006-FA-0N00 Abstract: mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA Contextual Info: XP1006-FA 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Rev 01-Sep-10 RoHS Compliant Features • • • • • • X-Band 10W Power Amplifier Flange Package 21 dB Large Signal Gain +40 dBm Saturated Output Power 30% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing	Original	xp1006-fa 01-sep-10 xp1006-fa-0n00 mmic amplifier x-band 10w +1mmic x-band amplifier	PDF
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit	Original	aph478 p1014 01-nov-06 xp1006 +6mil-std-883 xp1014 i0005129 xp1014-bd-000w xp1014-bd-000v xp1014-bd-ev1	PDF
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 May 2005 - Rev 05-May-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit	Original	aph478 p1014 05-may-05 xp1006/7 +3mil-std-883 xp1014 i0004966	PDF
xp1014 Abstract: P1014-BD Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	14-nov-08 p1014-bd xp1014 i0005129 +4xp1006 mil-std-883 xp1014-bd-000v xp1014-bd-ev1	PDF
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 August 2005 - Rev 03-Aug-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency	Original	03-aug-05 aph478 p1014 xp1014 +3i0005129 xp1006/7 mil-std-883	PDF
P1006BD Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	11-nov-08 p1006-bd mil-std-883 xp1006 +6xp1006-bd-000v xp1006-bd-ev1 p1006bd xp1006-bd gaas fet amplifier x-band 10w mimix asia	PDF
tanaka gold wire Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	13-mar-06 p1006 mil-std-883 xp1006 +6tanaka gold wire mmic x-band amplifier dm6030hk ts3332ld xp1006 bonding x-band gaas phemt mmic chip	PDF
power transistor gaas x-band Abstract: mmic AMPLIFIER x-band 10w Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	05-jun-05 p1006 mil-std-883 xp1006 +2power transistor gaas x-band mmic amplifier x-band 10w	PDF
mmic AMPLIFIER x-band 10w Abstract: P1006-FA power transistor mimix x-band XP1006-FA-0N00 x-band power amplifier I0004966 Contextual Info: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin September 2008 - Rev 10-Sep-08 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing	Original	10-sep-08 p1006-fa xp1006-fa-0n00 xp1006-fa-ev1 +5xp1006-fa mmic amplifier x-band 10w power transistor mimix x-band x-band power amplifier i0004966	PDF

P1006 Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	01-nov-06 p1006 mil-std-883 xp1006 +6xp1006-bd-000v xp1006-bd-000w xp1006-bd-ev1 gaas fet amplifier x-band 10w xp1006 bonding xp1006-bd	PDF
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	01-nov-06 p1006 mil-std-883 xp1006 +3xp1006-bd-000v xp1006-bd-000w xp1006-bd-ev1	PDF
p1006-fa Abstract: XP1006-FA MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1 Contextual Info: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing	Original	16-aug-06 p1006-fa xp1006-fa-0n00 xp1006-fa-ev1 +4xp1006-fa mmic x-band amplifier p1006 mmic amplifier x-band 10w	PDF
GAAS FET AMPLIFIER x-band 10w Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing	Original	03-aug-07 p1006-bd mil-std-883 xp1006 +9xp1006-bd-000v xp1006-bd-ev1 gaas fet amplifier x-band 10w xp1006-bd p1006bd mmic x-band amplifier p1006 dm6030hk ts3332ld	PDF