XP1006-BD
Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Contextual Info: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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xp1006-bdmil-std-88301-sep-10xp1006+3x-band gaas phemt mmic chipgaas fet amplifier x-band 10wchip advanced tech
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P1006BD
Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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11-nov-08p1006-bdmil-std-883xp1006+6xp1006-bd-000vxp1006-bd-ev1p1006bdxp1006-bdgaas fet amplifier x-band 10wmimix asia
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P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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aph478p101414-apr-06xp1006/7+6mil-std-883xp1014i000512984-1lmixp1006 bondingghz hpa
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p1014
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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01-nov-06aph478p1014xp1014+6i0005129xp1006mil-std-883xp1014-bd-000wxp1014-bd-000vxp1014-bd-ev1
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tanaka gold wire
Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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13-mar-06p1006mil-std-883xp1006+6tanaka gold wiremmic x-band amplifierdm6030hkts3332ldxp1006 bondingx-band gaas phemt mmic chip
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Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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xp1014-bdxp1006mil-std-88301-sep-10+4xp1014i0005129chip advanced techxp1006 bonding
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power transistor gaas x-band
Abstract: mmic AMPLIFIER x-band 10w
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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05-jun-05p1006mil-std-883xp1006+2power transistor gaas x-bandmmic amplifier x-band 10w
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P1014
Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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p1014-bd03-aug-07xp1006mil-std-883+8xp1014i0005129xp1014-bd-000vxp1014-bd-ev1p1014dm6030hkts3332ldxp1006 bonding
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XP1006-FA-0N00
Abstract: mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA
Contextual Info: XP1006-FA 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Rev 01-Sep-10 RoHS Compliant Features • • • • • • X-Band 10W Power Amplifier Flange Package 21 dB Large Signal Gain +40 dBm Saturated Output Power 30% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing
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xp1006-fa01-sep-10xp1006-fa-0n00mmic amplifier x-band 10w+1mmic x-band amplifier
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mmic AMPLIFIER x-band 10w
Abstract: P1006-FA power transistor mimix x-band XP1006-FA-0N00 x-band power amplifier I0004966
Contextual Info: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin September 2008 - Rev 10-Sep-08 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing
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10-sep-08p1006-faxp1006-fa-0n00xp1006-fa-ev1+5xp1006-fammic amplifier x-band 10wpower transistor mimix x-bandx-band power amplifieri0004966
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power transistor gaas x-band
Abstract: x-band transistor
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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30-sep-05p1006mil-std-883xp1006+2power transistor gaas x-bandx-band transistor
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P1006
Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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01-nov-06p1006mil-std-883xp1006+6xp1006-bd-000vxp1006-bd-000wxp1006-bd-ev1gaas fet amplifier x-band 10wxp1006 bondingxp1006-bd
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Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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xp1014
Abstract: P1014-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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14-nov-08p1014-bdxp1014i0005129+4xp1006mil-std-883xp1014-bd-000vxp1014-bd-ev1
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p1006-fa
Abstract: XP1006-FA MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1
Contextual Info: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing
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16-aug-06p1006-faxp1006-fa-0n00xp1006-fa-ev1+4xp1006-fammic x-band amplifierp1006mmic amplifier x-band 10w
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GAAS FET AMPLIFIER x-band 10w
Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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03-aug-07p1006-bdmil-std-883xp1006+9xp1006-bd-000vxp1006-bd-ev1gaas fet amplifier x-band 10wxp1006-bdp1006bdmmic x-band amplifierp1006dm6030hkts3332ld
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Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 August 2005 - Rev 03-Aug-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency
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03-aug-05aph478p1014xp1014+3i0005129xp1006/7mil-std-883
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