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    BA004 Search Results

    BA004 Datasheets (2)

    Huashuo Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HSBA0048
    		Huashuo Semiconductor N-Ch 100V Fast Switching MOSFET with 48A continuous drain current, 6.6mΩ RDS(ON) at VGS=10V, low gate charge, and high cell density trench technology for efficient synchronous rectification in AC/DC quick chargers. Original PDF
    badge HSBA0040
    		Huashuo Semiconductor N-channel trench MOSFET with 100 V drain-source voltage, 64 A continuous drain current, 14 mΩ typical RDS(ON), and low gate charge, suitable for synchronous buck converters. Original PDF
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    BA004 Price and Stock

    JRH ELECTRONICS

    JRH ELECTRONICS 370BA004B1504CA

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    DigiKey 370BA004B1504CA Bulk 66 1
    • 1 $2364.08
    • 10 $2316.80
    • 100 $2225.06
    • 1000 $2180.56
    • 10000 $2180.56
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    JRH ELECTRONICS 370BA004B1512CA

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    DigiKey 370BA004B1512CA Bulk 66 1
    • 1 $2593.76
    • 10 $2541.89
    • 100 $2441.23
    • 1000 $2392.41
    • 10000 $2392.41
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    JRH ELECTRONICS 370BA004NF2224CA

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    DigiKey 370BA004NF2224CA Bulk 66 1
    • 1 $4031.39
    • 10 $3950.76
    • 100 $3794.31
    • 1000 $3718.42
    • 10000 $3718.42
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    JRH ELECTRONICS 370BA004B2010CA-7A

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    DigiKey 370BA004B2010CA-7A Bulk 66 1
    • 1 $1791.54
    • 10 $1755.71
    • 100 $1686.18
    • 1000 $1652.46
    • 10000 $1652.46
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    JRH ELECTRONICS 390BA004B1104CA

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    DigiKey 390BA004B1104CA Bulk 61 1
    • 1 $4535.14
    • 10 $4444.43
    • 100 $4268.43
    • 1000 $4183.07
    • 10000 $4183.07
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    BA004 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AOZ1075AI

    Abstract: aoz1075 G700HC AOZ107 2a 200v schottky diode AOZ1094DI AOZ1015AI BA004 aoz1094 1015AI
    Contextual Info: AOS Semiconductor Product Reliability Report AOZ1016AI/1017AI/1015AI/1019AI/1075AI/1081AI/ 1017DI/1094DI, rev 8 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com October 10, 2008


    Original     		016AI/1017AI/1015AI/1019AI/1075AI/1081AI/ 1017DI/1094DI, AOZ1016AI/1017AI/1015AI/1019AI/ 1075AI/1081AI/1017DI/1094DI. 1015AI/1019AI/1075AI/1081AI/1017DI/1094DI 617x10-5) 77E-8 -105D AOZ1075AI aoz1075 G700HC AOZ107 2a 200v schottky diode AOZ1094DI AOZ1015AI BA004 aoz1094 1015AI PDF

    pHEMT transistor MTBF

    Abstract: BA0047
    Contextual Info: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier BA0047 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 15.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		28LN2BA0047 01-May-02 MIL-STD-883 22Mar2002 22Mar20 BA0047 22Mar200 28LN2BA004 pHEMT transistor MTBF BA0047 PDF

    Contextual Info: COMCHIP Small Signal Schottky Diodes S M D D IO D E S P E C IA L IS T CDBV3-00340S/C/A-G Reverse Voltage: 40 Volts Forward Current: 30mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit


    OCR Scan     		CDBV3-00340S/C/A-G OT-323, MIL-STD-750, 00340S 00340C 0340A OT-323 CDBV3-00340S/C/A-G) QW-BA004 PDF