XU1001 Search Results

U1001

Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

B1002

Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

R300 diodes

Abstract: b1002 100 XP1001 B1002 XB1002 XU1001
Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias

84-1LMI

Abstract: P1005 XB1005 XP1005 XU1001
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

XB1005-BD

Abstract: DM6030HK P1005-BD TS3332LD XP1005 XP1005-BD XU1001-BD
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

TS3332LD

Abstract: U1001 XP1005-BD XU1001-BD 330400
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD April 2007 - Rev 19-Apr-07 Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier January 2007 - Rev 26-Jan-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain

XP1001

Abstract: XU1001 84-1LMI P1001 XB1002
Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain

ID430

Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain

38H4PBA0157

Abstract: R143 335E-08
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

672047

Abstract: 304091 1903354 13007-2
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias

U1001

Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
Contextual Info: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size

903-949

Abstract: 74226 XP1001 13007-2 720-0164 4-01-3024 14364 62726 DM6030HK TS3332LD
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias

Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain

RD36K

Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2002 - Rev 26-Jun-02 Features Chip Device Layout P1001 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain

TS3332LD

Abstract: U1001 XP1005-BD XU1001-BD
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD October 2008 - Rev 16-Oct-08 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Commercial-Level Visual Inspection Using

XP1002

Abstract: 84-1LMI P1002 XB1002 XU1001 420 MMIC
Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 May 2002 - Rev 01-May-02 Features Chip Device Layout P1002 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain

Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias

transistor s11 s12 s21 s22

Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002-BD May 2007 - Rev 02-May-07 Features High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias

MAX 77693

Abstract: 154407 672047 Mimix xb1005 190728 132-16 103-336-15 transistor RF S-parameters 443-958 319-770
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias

transistor B1005

Abstract: 74226 014728 17555 672047 pin configuration of 74151 5609 transistor DATASHEET 5609 transistor 87511 74151 pin configuration
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias

xg1015-SE

Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Contextual Info: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com

P1005-BD

Abstract: DM6030HK TS3332LD XB1005-BD XP1005 XP1005-BD XP1005-BD-000V XU1001-BD
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD October 2008 - Rev 05-Oct-08 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

014728

Abstract: 30106 38095 47185 62726 74226 DM6030HK TS3332LD XB1005 XB1005-BD-000V
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD October 2008 - Rev 02-Oct-08 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias