38H4PBA0157 Search Results

84-1LMI

Abstract: P1005 XB1005 XP1005 XU1001
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: XP1005-BD Power Amplifier 35.0-43.0 GHz Rev. V2 Features Chip Device Layout •     Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power

XB1005-BD

Abstract: DM6030HK P1005-BD TS3332LD XP1005 XP1005-BD XU1001-BD
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

38H4PBA0157

Abstract: R143 335E-08
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

P1005-BD

Abstract: DM6030HK TS3332LD XB1005-BD XP1005 XP1005-BD XP1005-BD-000V XU1001-BD
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD October 2008 - Rev 05-Oct-08 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

38MPA0547

Contextual Info: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 August 2005 - Rev 04-Aug-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

XP1005

Abstract: XP1005-BD XP1005-BD-000V XP1005-BD-EV1
Contextual Info: XP1005-BD Power Amplifier 35.0-43.0 GHz Rev. V2 Features Chip Device Layout •     Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power

Contextual Info: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 May 2005 - Rev 20-May-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing