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    Vishay Intertechnologies M39003/01-2775/98

    Tantalum Capacitor, 47 uF, 20 V, ? 10%, Axial Leaded, R, 7.34 mm, 17.42 mm - Bulk (Alt: M39003/01-2775/98)
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    Avnet Americas M39003/01-2775/98 Bulk 36 Weeks 20
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    Newark M39003/01-2775/98 Bulk 20
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    • 1000 $12.94
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    Molex 87759-8203

    Pin Header, 20 Contacts, 2 Rows, 2 mm, Tin, Copper Alloy, PCB Header, Straight, Polyamide, 2 A - Tape and Reel (Alt: 0877598203)
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    Avnet Americas 87759-8203 Tape & Reel 4,500
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    Molex 87759-8052

    - Rail/Tube (Alt: 0877598052)
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    Avnet Americas 87759-8052 Tube 2,700
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    Molex 87759-8054

    - Tape and Reel (Alt: 0877598054)
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    Avnet Americas 87759-8054 Tape & Reel 11,250
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    Bristol Electronics 87759-8054 299 1
    • 1 $6.27
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    Molex 87759-8503

    - Tape and Reel (Alt: 0877598503)
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    Avnet Americas 87759-8503 Tape & Reel 3,000
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    77598 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR R1002

    Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
    Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing


    Original     		r1002mil-std-883transistor r1002r1002 transistor+284-1lmixr1002 PDF

    B1002

    Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
    Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		b100226-jun-02mil-std-883xp1001+6oc 140 germanium transistorphemt transistor mtbf84-1lmixb1002xu1001b1002 100 PDF

    TRANSISTOR R1002

    Abstract: R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002
    Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 May 2002 - Rev 01-May-02 Features Chip Device Layout y High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 3.0 dB Noise Figure 18.0 dB Image Rejection 100% On-Wafer RF and DC Testing


    Original     		r100201-may-02mil-std-883transistor r1002+6r1002 transistortransistors r1002256qam84-1lmixh1000xr1002 PDF

    B1000

    Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
    Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		b100001-may-02mil-std-883mimix xb1000+2xu1000phemt transistor mtbf PDF

    Mimix phase shifter

    Abstract: 84-1LMI D1000
    Contextual Info: 17.0-27.0 GHz GaAs MMIC Vector Modulator D1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 17.0-27.0 GHz Frequency Range 8.0 dB Typical Insertion Loss Continuous Phase Control Control Voltage from -1.5 to 0 VDC 2.33 mm X 2.50 mm Die Size 100% On-Wafer RF, DC and Insertion Loss Testing


    Original     		d1000mil-std-883mimix phase shifter84-1lmi PDF

    transistor R1001

    Abstract: R1001 84-1LMI XR1001
    Contextual Info: 36.0-40.0 GHz GaAs MMIC Receiver R1001 August 2001 - Rev 8/01/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 5.0 dB Typical Small Signal Conversion Gain 4.0 dB Typical Noise Figure 12.0 dB Typical Image Rejection 2.90 mm X 2.50 mm Die Size 100% On-Wafer RF and DC Testing


    Original     		r1001mil-std-883transistor r100184-1lmi+1xr1001 PDF

    B1002

    Abstract: 84-1LMI XB1002 OC 140 germanium transistor b1002 100
    Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 July 2001 - Rev 7/27/01 Features 36.0-43.0 GHz Frequency Range 25.0 dB Typical Small Signal Gain 4.0 dB Typical Noise Figure +14 dBm Typical Compression Point Operates at +3.0 to +5.5 VDC 2.90 mm X 1.50 mm Die Size


    Original     		b1002mil-std-88384-1lmixb1002+2oc 140 germanium transistorb1002 100 PDF

    pHEMT transistor MTBF

    Abstract: BA0047
    Contextual Info: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier 28LN2BA0047 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 15.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		28ln2ba004701-may-02mil-std-88322mar2002+522mar20ba004722mar20028ln2ba004phemt transistor mtbf PDF

    XB1001

    Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
    Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		b100101-may-02mil-std-883xb1001+484-1lmixp1000xu1000germanium small signal transistors PDF

    P115W

    Abstract: p115 p0049 34-1P
    Contextual Info: 24.0-32.0 GHz GaAs MMIC Low Noise Amplifier 28LN3UA0049 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Self-biased Architecture 20.0 dB Small Signal Gain 2.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		28ln3ua004901-may-02mil-std-883p115w+3p115p004934-1p PDF

    PCB Rogers RO4003

    Contextual Info: 17.0-27.0 GHz GaAs MMIC Surface Mount Buffer Amplifier B1001P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 19.0 dB Small Signal Gain 3.5 dB Noise Figure


    Original     		b1001p101-may-02xb1001pcb rogers ro4003 PDF

    diode p1000

    Abstract: P1000 P1000J 84-1LMI 55VID vg34c
    Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 17.0-24.0 GHz Frequency Range 18.0 dB Typical Small Signal Gain On-Chip Output Power Detector +37.0 dBm Typical Third Order Intercept Point IP3 Operates at +5.5 VDC


    Original     		p1000mil-std-883diode p1000p1000j+384-1lmi55vidvg34c PDF

    r1003 transistor

    Abstract: TRANSISTOR R1003 r1003 XR1003 84-1LMI pHEMT transistor MTBF R100-3
    Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1003 October 2001 - Rev 10/05/01 Features Chip Device Layout 20.0-32.0 GHz Frequency Range 17.0 dB Typical Conversion Gain 3.0 dB Typical Noise Figure 22.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


    Original     		r1003mil-std-883r1003 transistortransistor r1003+4xr100384-1lmiphemt transistor mtbfr100-3 PDF

    84-1LMI

    Abstract: P1001
    Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2001 - Rev 6/06/01 Features Chip Device Layout P1001 ar y 26.0-40.0 GHz Frequency Range 12 dB Typical Small Signal Gain Excellent Input/Output Return Loss +36.0 dBm Typical Third Order Intercept Point IP3


    Original     		p1001mil-std-88384-1lmi PDF

    transistor R1001

    Abstract: mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC
    Contextual Info: 36.0-40.0 GHz GaAs MMIC Receiver R1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Sub-Harmonic Receiver 5.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		r100101-may-02mil-std-883transistor r1001+6mixers circuit using 90 degree hybridpresidio componentsxr100184-1lmixh100038rec PDF

    R1000 resistor

    Abstract: XR1000 R1000 XH1000 receiver mmic sl353 pHEMT transistor MTBF
    Contextual Info: 17.0-27.0 GHz GaAs MMIC Receiver R1000 May 2002 - Rev 01-May-02 Chip Device Layout Features Fundamental Integrated Receiver 10.0 dB Conversion Gain 3.5 dB Noise Figure 15.0 dB Image Rejection 60.0 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


    Original     		r100001-may-02mil-std-883r1000 resistor+5xr1000xh1000receiver mmicsl353phemt transistor mtbf PDF

    U1001

    Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
    Contextual Info: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size


    Original     		u1001mil-std-883phemt transistor mtbf84-1lmi+4xu1001u100-1u-10-0177598 PDF

    harmonic mixer

    Abstract: 84-1LMI H1000
    Contextual Info: 19.0-25.0 GHz GaAs MMIC Harmonic Mixer H1000 June 2001 - Rev 6/06/01 Features Chip Device Layout 19.0-25.0 GHz Frequency Range 8X, 10X or 12X Pump Operation 1.9-2.5 GHz Pump Frequency 0.5-1.0 GHz Recovered IF Frequency 30 to 50 dB Conversion Loss 2.33 mm X 2.00 mm Die Size


    Original     		h1000mil-std-883harmonic mixer84-1lmi PDF

    RD36K

    Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2002 - Rev 26-Jun-02 Features Chip Device Layout P1001 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain


    Original     		p100126-jun-02mil-std-883rd36k PDF

    BA0050

    Contextual Info: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier 28LN3BA0050 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 24.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		28ln3ba005001-may-02mil-std-883mar2002+2ba00503ba0050 PDF

    XP1002

    Abstract: 84-1LMI P1002 XB1002 XU1001 420 MMIC
    Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 May 2002 - Rev 01-May-02 Features Chip Device Layout P1002 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain


    Original     		p100201-may-02mil-std-883xp1002+484-1lmixb1002xu1001420 mmic PDF

    diode p1000

    Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
    Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector


    Original     		p100001-may-02mil-std-883diode p1000+8p1000 diodeoc 140 germanium transistorsl35384-1lmixp1000xu1000phemt transistor mtbfgold detector circuit diagram PDF

    P1002

    Abstract: 84-1LMI Mimix Broadband
    Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 June 2001 - Rev 6/06/01 Features Chip Device Layout P1002 ar y 26.0-40.0 GHz Frequency Range 12 dB Typical Small Signal Gain On-Chip Output Power Detector +36.0 dBm Typical Third Order Intercept Point IP3 Operates at +5.5 VDC


    Original     		p1002mil-std-88384-1lmimimix broadband PDF

    A005

    Contextual Info: 25.0-34.0 GHz GaAs MMIC Low Noise Amplifier 28LN2UA0054 May 2002 - Rev 01-May-02 Features Chip Device Layout y Receiver Front End Small Size 18.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original     		28ln2ua005401-may-02mil-std-88328ln2u+22mar20a005 PDF