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XB1002 Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
XB1002		Mimix Broadband	36.0-43.0 GHz GaAs MMIC Buffer Amplifier	Original	PDF	251.83KB	5
XB1002		Mimix Broadband	36.0-43.0 GHz GaAs MMIC Buffer Amplifier	Original	PDF	418.41KB	6
XB100-24S15		YCL Electronics	DC-to-DC Power Supply Module	Original	PDF	68.18KB	2

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Artesyn Embedded Technologies BXB100-24S05FLT
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Bristol Electronics	BXB100-24S05FLT		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Artesyn Embedded Technologies BXB100-24S3V3FLT SINGLE OUTPUT DC-DC CONVERTERS
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Bristol Electronics	BXB100-24S3V3FLT		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Energy Industries Inc BXB100-24S12FLTJ Module DCDC 1OUT 12V 833A 100W 9Pin HalfBrick
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Avnet Abacus	BXB100-24S12FLTJ				50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

XB1002 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
B1002 Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100 Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	b1002 26-jun-02 mil-std-883 xp1001 +6oc 140 germanium transistor phemt transistor mtbf 84-1lmi xb1002 xu1001 b1002 100	PDF
B1002 Abstract: 84-1LMI XB1002 OC 140 germanium transistor b1002 100 Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 July 2001 - Rev 7/27/01 Features 36.0-43.0 GHz Frequency Range 25.0 dB Typical Small Signal Gain 4.0 dB Typical Noise Figure +14 dBm Typical Compression Point Operates at +3.0 to +5.5 VDC 2.90 mm X 1.50 mm Die Size	Original	b1002 mil-std-883 84-1lmi xb1002 +2oc 140 germanium transistor b1002 100	PDF
R300 diodes Abstract: b1002 100 XP1001 B1002 XB1002 XU1001 Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias	Original	b1002 01-apr-05 mil-std-883 r300 diodes +4b1002 100 xp1001 xb1002 xu1001	PDF
Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier January 2007 - Rev 26-Jan-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain	Original	26-jan-07 p1001-bd mil-std-883 xp1001-bd-000x +2xp1001-bd xp1001-bd-ev1	PDF
XP1001 Abstract: XU1001 84-1LMI P1001 XB1002 Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain	Original	05-may-05 p1001 mil-std-883 xp1001 +3xu1001 84-1lmi xb1002	PDF
ID430 Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain	Original	02-may-07 p1001-bd mil-std-883 xp1001-bd-000v +4xp1001-bd-000w xp1001-bd-ev1 xp1001 id430	PDF
YCL 24s05 Abstract: 05s05 05S12 XB125-05S12 XB500-24S05 YCL SP200-24S05 XB200-05S15 XB300-24S05 XB100-12S15 XB250-05S12 Contextual Info: 3watt /24pins DIL/2000Vdc isolation XB series/2:1 input range Feature: l l l l l l YCL Low Cost 2:1 input range Industry-standard package and pinout 2000Vdc Input/Output Isolation Single and Dual Outputs No External Components required Specifications: At 25°C	Original	/24pins dil/2000vdc 2000vdc 20mhz +16xb300-48s05 xb125-48s12 xb100-48s15 xb500-48s05 xb250-48s12 xb200-48s15 ycl 24s05 05s05 05s12 xb125-05s12 xb500-24s05 ycl sp200-24s05 xb200-05s15 xb300-24s05 xb100-12s15 xb250-05s12	PDF
Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain	Original	05-may-05 p1001 mil-std-883	PDF
RD36K Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2002 - Rev 26-Jun-02 Features Chip Device Layout P1001 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain	Original	p1001 26-jun-02 mil-std-883 rd36k	PDF
XP1002 Abstract: 84-1LMI P1002 XB1002 XU1001 420 MMIC Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 May 2002 - Rev 01-May-02 Features Chip Device Layout P1002 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain	Original	p1002 01-may-02 mil-std-883 xp1002 +484-1lmi xb1002 xu1001 420 mmic	PDF
Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias	Original	b1002 01-apr-05 mil-std-883	PDF
transistor s11 s12 s21 s22 Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002-BD May 2007 - Rev 02-May-07 Features High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias	Original	02-may-07 b1002-bd mil-std-883 xb1002-bd-000v +4xb1002-bd-000w xb1002-bd-ev1 xb1002 transistor s11 s12 s21 s22	PDF