TRANSISTORS IGBT Search Results

PJ 986

Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD
Contextual Info: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

10N50A

Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
Contextual Info: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRGAC50U

Abstract: transistor G46 IGBT g48 ge 142 bt 34w
Contextual Info: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

100-C

Abstract: IRGMC30F 9714A
Contextual Info: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IR 92 0151

Abstract: IRGAC40F IRGAC40 transistor g23
Contextual Info: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

til 31a

Abstract: IRGMC40U
Contextual Info: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

2sc 1740 TRANSISTOR equivalent

Abstract: 40HFL60 IRGMC40F 480V1
Contextual Info: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRGMC50F

Abstract: IRGMC50FD IRGMC50FU 39AF
Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: PowerMOS Transistors incl. TOPFETs and IGBTs CONTENTS Page PREFACE 3 INDEX 5 SELECTION GUIDE 13 INTRODUCTION 25 POWERMOS TRANSISTORS "Understanding the data sheet" 29 DEVICE DATA in alphanumeric sequence 37 PACKAGE INFORMATION 1125 LEADFORM OPTIONS 1135

SGF15N90D

Contextual Info: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

Contextual Info: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

fairchild induction heater

Abstract: SGL60N90DG3
Contextual Info: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

Contextual Info: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

induction heating ic

Abstract: SGL60N90DG3YD induction heating saturation
Contextual Info: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

IRGAC50F

Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50
Contextual Info: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while