TRANSISTOR T03 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

PRSS0004ZC-A

Contextual Info: Magazine T03PL code Magazine PVC material Polyvinyl chloride Package name Renesas code Previous code TO-3PL* PRSS0004ZC-A T3PL Maximum storage No. Maximum storage No. Maximum storage No. Transistor/Magazine Magazine/Inner box Transistor/Inner box 25 10 250

3p transistor

Abstract: PRSS0004ZB-A
Contextual Info: Magazine code Magazine material T03P-LF PVC Polyvinyl chloride Package name Renesas code Previous code Maximum storage No. Transistor/Magazine TO-3P* PRSS0004ZB-A T3PO 30 Maximum storage No. Maximum storage No. Packing form Magazine/Inner box Transistor/Inner box

Contextual Info: 7^0741 SSE D SANKEN ELECTRIC CO LT» 0000=175 60S * S A K J Silicon NPN Epitaxial Planar ☆ High hFE Transistor, Low VcEisat Transistor ☆ Switching Transistor SC4024 Application Example: DC to DC Converter, Emergency Lighting Inverter, and General Purpose

transistor TO220

Abstract: TO-220 transistor package T03A TA15A T02D TA15D TA03F T-03-A T03B T03D
Contextual Info: Transistor Outline TO-220 2 Lead Molded TO-220 NS Package Number T02D 1999 National Semiconductor Corporation MS101173 www.national.com Transistor Outline (TO-220) May 1999 2 Lead Molded TO-220 NS Package Number TA02A 3 Lead Molded TO-220 NS Package Number T03A

Contextual Info: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling

transistor Marking code t03

Abstract: PDTA114EU PDTC114EU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor Product specification Supersedes data of 1997 Oct 03 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor

Contextual Info: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

8B123

Abstract: 2SB1232 2SD1842 1SB12
Contextual Info: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.

k554

Abstract: 200B BUK554-200A BUK554-200B D030 T0220AB
Contextual Info: b'lE T> • N AUER PHILIPS/DISCRETE bbS3T31 DD30flDD D77 » A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: N AUER PHILIPS/DISCRETE b^E T> • bb53T31 0030600 D77 » A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUZ34

Abstract: 6j11 V103
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

3261a

Abstract: 2SB1232 2SD1842 B1232
Contextual Info: O rdering num ber: EN 3261A 2SB1232/2SD1842 N0.3261A 2SB1232: PNP Epitaxial Planar Silicon Transistor 2SD1842: NPN Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications F e a tu re s • Large current capacity and wide ASO. •Low saturation voltage.

2SB1231

Abstract: 2SD1841
Contextual Info: O rdering num ber: EN3260A SMÊYO % No 326ÖA i 2SB1231/2SD1841 2SB1231: PNP Epitaxial Planar Silicon Transistor 2SD1841: NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications Features • Large current capacity and wide ASO. • Low saturation voltage.

BUZ54

Contextual Info: , Una. \l Cs 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ54 PowerMOS Transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope.

BUZ64

Abstract: MC 331 transistor transistor d 331
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

buz53a

Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE _BUZ53A_ DbE D • bbS3T31 DD14710 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ24

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BUZ54A

Abstract: IEC134 BUZ54
Contextual Info: N AMER PHILIPS/DISCRETE übE D PowerMOS transistor " • ^53=131 0014724 S ■ BUZ54A T - 2^-/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.