BB53CL31 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.

Contextual Info: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.

BUZ24

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BFG540

Abstract: transistor N43
Contextual Info: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency

BTY79-400R

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 00S73A3 T77 H A P X B IY79 StHIhS b'lE » THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits e.g. light and motor control and power switching systems. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to

Contextual Info: N AMER PHILIPS/DISCRETE t^ E D • bb53c131 D03bb70 174 BYV96D A IAPX BYV96E AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan

Contextual Info: H 11B 255 _ » A O P T O C O U P L E R Optically coupled isolator consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. features • High maximum output voltage e Very high output/input DC current transfer ratio

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE b b S B 'm » DD2flfl7b E3^ BLU97 ; v U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.

MR25 resistors

Contextual Info: N AMER PHILIPS/DISCRETE b*lE D • APX bb53T31 DQ2flfllb AbM BLU20/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

CECC50 005

Abstract: CECC50 005-005 BZX55 CECC50 005 005 c2v4 c2v7 c47 surge c3v3
Contextual Info: N AMER PHILIPS/DISCRETE _ bTE D • J bbSB'lBl 002bflQ2 4^S ■ APX bZX55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V

Contextual Info: N AMER P H I L I P S / D I S C R E T E b'lE D bb 5 3^ 31 □D3fi3fl? SOT H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

Contextual Info: rr N AMER PHILIPS/DISCRETE bbS3T31 Q01S72S 2 5SE D BUS13 BUS13A y v T-32-/SSILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbS3^3]> 0037301 R31 « A P X BT151 SERIES J V THYRISTORS Glass-passivated thyristors in TO-220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications include

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T3i o o E a m a b*1E J> td3 BUT12 BUT12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO220 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.